Pan Jit Americas, Inc.

Michael Kountz

George M Engle

Steven Evers

Michael Adamson

Randy Olsen

A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N, is activated or ionized in a reactor before it is deposited on the substrate.

Method of fabricating semiconductor by nitrogen doping of silicon film

A method of forming a film on a substrate. In accordance with the invention, an adhesion layer is formed on the substrate. The adhesion layer is chemically bonded to the substrate and has a textured surface. The film is then formed on the textured surface of the adhesion layer.

Growing community of inventors

Gilbert, AZ, United States of America

Michael Kountz