Siltronic Ag

Michael Gehmlich

Timo Mueller

Andreas Sattler

Frank Faller

Karl Mangelberger

Gudrun Kissinger

Michael Skrobanek

Dawid Kot

Michael Boy

Dirk Waehlisch

Timo Müller

A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5×10AT/cm(new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200° C. and not more than 1260° C. for a period of not less than 5 s and not more than 30 s, where the front side of the substrate wafer is exposed to an atmosphere containing argon;

Method for producing semiconductor wafers

A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295&#xb0; C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800&#xb0; C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300&#xb0; C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.

Method for producing a semiconductor wafer composed of monocrystalline silicon

Semiconductor wafers useful for NAND circuitry and having a front side, a rear side, a middle and a periphery, have an Nv region which extends from the middle to the periphery;

Semiconductor wafer composed of single-crystal silicon with high gate oxide breakdown, and a process for the manufacture thereof

Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.

Epitaxially coated semiconductor wafer, and method for producing an epitaxially coated semiconductor wafer

Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 &#x3bc;m and not more than 18 &#x3bc;m, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 &#x3bc;m from the front side is not less than 2&#xd7;10cm. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.

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Weissenborn, Germany

Michael Gehmlich