Tokyo Electron Limited

International Rectifier Corporation

Michael G Ward

Joseph T Hillman

Gerrit J Leusink

Tugrul Yasar

Michael S Ameen

Gert J Leusink

Douglas A Webb

Tayler Bao

Jerry Yeh

Semiconductor devices, e.g., heterojunction field effect transistors, fabricated with silicon-germnanium buffer layer and silicon-carbon channel layer structures. The invention provides a method of reducing threading defect density via reducing germanium content in a SiGe relaxed buffer layer on which a strained silicon channel layer is formed, by forming the strained silicon channel layer of a silicon-carbon alloy, e.g., containing less than about 1.5 atomic % C substitutionally incorporated in the Si lattice of the alloy.

Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys

A methodology is described by which a processing chamber used to deposit plasma-enhanced Ti-CVD films may be conditioned and passivated efficiently after either a wet cleaning or in-situ chemical cleaning, or after each successive deposition sequence. The technique allows a CVD process, such as, for example, a Ti-PECVD process, to recover film properties, such as resistivity, uniformity, and deposition rate, in a minimum time and following a minimum number of conditioning wafers, thereby improving the productivity of the system. The technique also maintains the stability of the system during continuous operation. This allows for the processing of thousands of wafers between in-situ cleaning of the chamber. Immediately following chamber cleaning and before performing the Ti-CVD process on wafers, the methodology includes forming a plasma with reactive gas to heat reactor components, then adding the coating material containing reactant to deposit the coating material onto the reactor components, then introducing an oxidizing or reducing gas into the chamber to stabilize the coating on the reactor parts, followed by resumption of the wafer coating process. During continuous operation in the Ti-CVD of wafers, the methodology includes introducing a mixture of Ar and H gases forming a plasma to heat reactor components where necessary, then introducing and chemically reducing TiCl to deposit Ti on the heated reactor components, then introducing oxidizing or reducing gas into the chamber for a period of time necessary to stabilize the Ti film. Preferably, N and NH are introduced and wafer passivation and reactor stabilization are performed simultaneously. Stabilization of the reactor only, and in some cases also the wafer, may use NH , H O, O or other gases.

Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus

An apparatus for depositing a film on a substrate utilizing a plasma-enhanced chemical vapor deposition process comprises a process chamber having an electrically grounded element therein and an RF biased electrode positioned in the process chamber proximate a substrate. An insulative element is coupled between the electrode and the grounded element other than the grounded substrates, and is formed of an electrically insulative material and has an insulative surface for effectively electrically isolating the electrode from the grounded element within the process chamber. The insulative element includes at least one feature formed in the insulative surface, wherein the feature has a high effective aspect ratio for inhibiting the deposition of a film therein to thereby create an electrical discontinuity in a film which may form on the insulative surface during the plasma-enhanced chemical vapor deposition process.

Apparatus and method for electrically isolating an electrode in a PECVD process chamber

A single chamber method for depositing a stack including titanium and titanium nitride on a wafer surface. Titanium is deposited by plasma enhanced chemical vapor deposition and then plasma nitrided. Titanium nitride is subsequently deposited by a thermal chemical vapor deposition process. Advantageously, the temperatures of the substrate and showerhead as well as the internal chamber pressure are maintained at substantially constant values throughout deposition of the stack.

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Phoenix, AZ, United States of America

Michael G Ward