Advanced Micro Devices Corporation

Michael Friedemann

Volker Kahlert

Axel Preusse

Robert Seidel

Berit Freudenberg

By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.

Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime

In forming a thin conductive layer in an interconnect structure by sputter deposition including a re-sputtering step, a flash deposition step is performed after the re-sputtering step to provide a sufficient layer thickness at critical locations, such as at positions of structure irregularities. The flash deposition step may be performed for a fixed process time so that less effort in process control is required while, at the same time, an increased reliability may be obtained compared to conventional approaches without a flash deposition.

Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition

A conductive barrier layer may be formed within high aspect ratio openings by a two-step ionizing sputter deposition. The first step is performed at low pressure and low bias power to obtain good coverage of upper portions of the openings. In the second step, the bias power and the pressure are raised to improved directionality of the particles while at the same time increasing the scatter events so that an increased deposition rate at critical structure areas is obtained, thereby achieving a good coverage at lower sidewall areas.

Method of forming a conductive barrier layer having improved coverage within critical openings

The adhesion properties of a metal interconnect structure are enhanced by selectively depositing a barrier layer component having good adhesion to an underlying metal on the bottom surface of a via. Then, a further barrier layer having superior adhesion characteristics for the dielectric is formed on the dielectric sidewalls of the via, so that excellent adhesion to the dielectric and the underlying metal is achieved. The selectivity of the deposition may be accomplished by exploiting the capabilities of modem IPVD tools.

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Dresden, Germany

Michael Friedemann