Applied Materials, Inc.

Novellus Systems Incorporated

Michael Danek

Mei Yin Chang

Eric Andrew Englhardt

Raashina Humayun

Anand Chandrashekar

Kaihan Abidi Ashtiani

Feng Chen

Alan F Morrison

Lana Hiului Chan

Marvin De-Dui Liao

Yeh-Jen Kao

Dale DuBois

Mirko Glass

Anil Mane

Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics

The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Apparatus for constructing an oxidized film on a semiconductor wafer

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Cupertino, CA, United States of America

Michael Danek