Novellus Systems Incorporated

Michael D Kilgore

Bart Jan Van Schravendijk

Thomas W Mountsier

Jeffrey A Tobin

Timothy W Kueper

Christopher J Rau

Dan Ye

James C Oswalt

Jaime Onate

Wilbert G M Van Den Hoek

Jimmy Lam

A semiconductor workpiece processing system for treating a workpiece, such as a semiconductor wafer, is provided. A related operating control method is also provided. The system includes an electrostatic chuck configured to receive a workpiece, and a clamping voltage power supply coupled to the electrostatic chuck. The electrostatic chuck has a clamping electrode assembly, and the clamping voltage power supply is coupled to the clamping electrode assembly. The clamping voltage power supply includes a direct current (DC) voltage generator configured to generate a DC clamping voltage for the clamping electrode assembly, an alternating current (AC) voltage generator configured to generate an AC excitation signal for the clamping electrode assembly, and a processing architecture coupled to the clamping electrode assembly. The processing architecture is configured to analyze attributes of a workpiece presence signal obtained in response to the AC excitation signal, and, based on the attributes, verify proper/improper positioning of the workpiece relative to the electrostatic chuck.

Electrostatic chuck assembly with capacitive sense feature, and related operating method

A method for plasma processing of semiconductor wafers is provided that reduces plasma-induced damage to the gate dielectric while limiting damage to the wafer from particulates that flake off of the interior surfaces of the reaction chamber. Plasma conditions are maintained in the reaction chamber while the wafer is transferred into the chamber and the plasma process is performed. After the plasma process, while still maintaining plasma conditions, the wafer is cooled to a removal temperature and removed from the reaction chamber.

High density plasma process for optimum film quality and electrical results

A plasma-enhanced chemical vapor deposition system includes a number of process gas injection tubes and at least one dedicated clean gas injection tube. A plasma is used to periodically clean the interior surfaces of the deposition chamber. The cleaning is made more rapid and effective by introducing the clean gas through the dedicated clean gas injection tube. In this manner the clean gas can be introduced at a relatively high flow rate without detracting from the cleaning of the interior surfaces of the process gas injection tubes. As a separate aspect of this invention, a high-frequency signal is applied to both terminals of the coil during the cleaning process. This produces a plasma, mainly by capacitive coupling, which has a shape and uniformity that are well-suited to cleaning the surfaces of the deposition chamber.

Chemical vapor deposition system including dedicated cleaning gas injection

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Santa Clara, CA, United States of America

Michael D Kilgore