Intel Corporation

Honeywell International Inc.

Sumitomo Bakelite Company Limited

Michael D Goodner

Robert P Meagley

Grant M Kloster

Michael L McSwiney

Kevin O'Brien

Bob E Leet

Kevin J Lee

Jihperng Leu

Kevin P O'brien

Robert Leet

Patrick R Morrow

Justin K Brask

James S Clarke

Boyan Boyanov

Victor Y Lu

Shriram Ramanathan

Bo Li

Makarem A Hussein

Nancy E Iwamoto

Roger Leung

Joseph T Kennedy

Tian-An Chen

James M Powers

Mansour Moinpour

Steven W Johnston

Andrew W Ott

Huey-Chiang Liou

Michael J Leeson

Mark A Fradkin

Donald Bruner

Manish Chandhok

Takashi Hirano

George Andrew Antonelli

Chris E Barns

David H Gracias

Peter K Moon

Shan Christopher Clark

Lee D Rockford

Kurt Schultz

Shane Nolen

Don Bruner

Shusaku Okaaki

Joseph Honeywell International Inc Kennedy

Bo Honeywell International Inc Li

Nancy Honeywell International Inc Iwamoto

Victor Honeywell International Inc Lu

Roger Honeywell International Inc Leung

An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

Antireflective coatings for via fill and photolithography applications and methods of preparation thereof

A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.

Forming semiconductor structures

Embodiments of buffer coatings for semiconductor and integrated circuit manufacturing are presented herein.

Method buffer coating having a physical mixture of high toughness polymer and a low shrinkage polymer

An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film.

A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.

Pixelated photoresists

A silicone-doped carbon interlayer dielectric (ILD) and its method of formation are disclosed. The ILD's dielectric constant and/or its mechanical strength can be tailored by varying the ratio of carbon-to-silicon in the silicon-doped carbon matrix.

Silicon-doped carbon dielectrics

Embodiments of buffer coatings for semiconductor and integrated circuit manufacturing are presented herein, wherein the buffer coating is provided by mechanically blending a first polymer with at least a second polymer. The mechanically blended polymers producing a buffer coating that provides a barrier that is has an increased toughness and decreased shrinkage.

Buffer coating having a physical mixture of high toughness polymer and a low shrinkage polymer

Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may be sealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.

Sealing porous dielectric materials

A cap may be formed anisotropically over a photoresist feature. For example, a material, such as a polymer, may be coated over the photoresist feature. If the coated material is photoactive, the cap may be grown preferentially in the vertical direction, creating high aspect ratio structures in some embodiments of the present invention.

Photoactive resist capping layer

A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air gaps are formed, in part, by depositing a sacrificial material within a trench and/or via that have been formed in a dielectric layer, and the sacrificial material is ultimately removed after metal deposition to create the air gaps. A porous dielectric cap may be deposited over the dielectric layer, and the sacrificial material may be removed through this porous dielectric layer. Other embodiments are described and claimed.

Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures

A composite photoresist comprises a photoresist material and a filler material dispersed within the photoresist material, wherein the filler material includes a plurality of nanoparticles. The photoresist material may comprise an acrylic-based photoresist, a novolak-based photoresist, a polyhydroxystyrene-based photoresist, a SLAM, or a BARC. The filler material may comprise base-soluble styrene-butadiene rubber nanospheres, nitrile-butadiene rubber nanospheres, polystyrene-based nanoparticles, acrylic-based nanoparticles, or inorganic nanoparticles. The nanoparticles may have an average diameter that is between around 10 nm and around 1000 nm and may have a loading in the photoresist material that is between around 5% and 50%. The composite photoresist may be used to form die-side metal bumps for use in a C4 connection that have a roughened sidewall surface but a smooth top surface.

Composite photoresist for modifying die-side bumps

Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

Method to modulate etch rate in SLAM

A method for forming a high mechanical strength, low k, interlayer dielectric material with aluminosilicate precursors so that aluminum is facilely incorporated into the silicon matrix of the material, and an integrated circuit device comprising one or more high-strength, low-k interlayer dielectric layers so formed.

Low-k dielectric layer formed from aluminosilicate precursors

Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may besealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.

A silicon nitride film may be deposited on a work piece using conventional deposition techniques and a selected source for use as a silicon precursor. A nitrogen precursor may also be selected for film deposition. Using the selected precursor(s), the temperature for deposition may be 500&#xb0; C., or less.

Forming a silicon nitride film

Growing community of inventors

Hillsboro, OR, United States of America

Michael D Goodner