Lucent Technologies Inc.

At+t Corp.

Agere Systems Inc.

Michael D Evans

Tae Yong Kim

Henry Hon Law

Henry Miles O'Bryan

Te-Sung Wu

Richard P Debiec

Warren J Pendergast

A process for the metalization of substrates is disclosed. The metal either forms a coating over the entire substrate, or it is patternwise deposited on the substrate surface. Metal is patternwise formed on the substrate either by forming a pattern of resist material on the substrate and depositing the material in the interstices defined by the pattern or by forming a patterned resist layer over a metal layer and transferring the pattern into the substrate using conventional techniques. The patterned resist layer is formed on the substrate using conventional techniques. The substrate is treated with reagents that promote the electroless plating of metal on the substrate surface. If the resist material has been previously formed on the substrate surface, the substrate surface is then dried. The remaining resist is then removed from the substrate surface. The substrate surface is then exposed to an electroless plating bath to form nickel onto those portions of the substrate surface that were treated with the sensitizing and activating solutions. The substrate is then heated to at least 180&deg; C. Additional layers of metal are formed on the substrate. After the additional layers are so formed, the substrate is again heated to a temperature of at least about 180&deg; C. after each layer is so formed.

Process for the electroless deposition of metal on a substrate

A method of forming a via hole in a substrate includes forming an opening in a substrate thereby forming a slag and then heating the substrate to recombine the slag with the substrate.

Method of forming vias

A multilayer composite interconnection for use in circuits including thin film elements and electrical interconnections includes a copper barrier layer interposed between a nickel layer and a gold layer of the interconnection. The copper layer is in a thickness sufficient to bar or at least to restrict diffusion of nickel through the gold layer under processing and operating conditions. The interconnection multilayer composite interconnection includes in an ascending order, titanium, palladium or palladium-titanium alloy, copper, nickel, copper barrier and gold layers.

Film circuit metal system for use with bumped IC packages

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Wilmington, MA, United States of America

Michael D Evans