Lam Research Corporation

Lam Researech Corporation

Michael C Kellogg

Rajinder Dhindsa

Alexei Marakhtanov

John Patrick Holland

Zhigang Chen

Christopher J Pena

John Edward Daugherty

Anthony De La Llera

Felix Leib Kozakevich

Richard Howard Gould

David Trussell

Kenneth Lucchesi

Klay Kunkel

Daniel Arthur Brown

Roger Patrick

Lin Zhao

Andrew D Bailey, Iii

Alexander Matyushkin

James E Tappan

Ian J Kenworthy

Babak Kadkhodayan

Gregory R Bettencourt

Jerrel Kent Antolik

Theo Panagopoulos

Andrew C Lee

Leonard John Sharpless

Allan Kent Ronne

Pratik Mankidy

Travis R Taylor

Tom Stevenson

Michael S Kang

Anthony J Norell

Kelly Fong

Adam Christopher Mace

Migùel A Saldana

Rajlnder Dhindsa

A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

Plasma processing devices having multi-port valve assemblies

A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.

Wafer transport assembly with integrated buffers

A substrate processing tool includes a wafer transport assembly that includes a first wafer transport module and extends along a longitudinal axis of the substrate processing tool. A plurality of process modules includes a first process module and a second process module arranged on opposite sides of the longitudinal axis of the substrate processing tool. Outer sides of the first wafer transport module are coupled to the first and second process modules, respectively. A service tunnel defined below the wafer transport assembly extends along the longitudinal axis from a front end of the substrate processing tool to a rear end of the substrate processing tool below the wafer transport assembly.

A method for manufacturing an arrestor for an electrostatic chuck includes printing first layers of an arrestor for an electrostatic chuck using a 3-D printer and an electrically non-conductive material. The first layers of the arrestor at least partially define a first opening to a gas flow channel. The method includes printing intermediate layers of the arrestor using the 3-D printer and the electrically non-conductive material. The intermediate layers of the arrestor at least partially define the gas flow channel. The method includes printing second layers of the arrestor using the 3-D printer and the electrically non-conductive material. The second layers of the arrestor at least partially define a second opening of the gas flow channel. At least one of the first opening, the second opening and/or the gas flow channel of the arrestor is arranged to prevent a direct line of sight between the first opening and the second opening of the arrestor.

3D printed plasma arrestor for an electrostatic chuck

Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.

Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators

A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

Monolithic gas distribution manifold and various construction techniques and use cases therefor

Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.

Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

A wafer transport assembly includes a first wafer transport module and a second wafer transport module. A buffer module, arranged between the first wafer transport module and the second wafer transport module, includes a first buffer stack and a second buffer stack. Outer sides of the first wafer transport module are coupled to first and second process modules, respectively, and outer sides of the second wafer transport module are coupled to third and fourth process modules, respectively. The first wafer transport module, the second wafer transport module, and the buffer module define a continuous wafer transport volume providing a controlled environment within the wafer transport assembly.

A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.

Chamber with vertical support stem for symmetric conductance and RF delivery

Component-locating templates or masks for use with positioning fluid-flow components on monolithic ceramic substrates are provided, as well as techniques for the manufacture of such templates.

Monolithic manifold mask and substrate concepts

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Oakland, CA, United States of America

Michael C Kellogg