Carl Zeiss Smt Gmbh

Carl Zeiss Sms Ltd.

Carl Zeiss Nts Gmbh

Nawotec Gmbh

Michael Budach

Christof Baur

Klaus Edinger

Thorsten Hofmann

Gabriel Baralia

Nicole Auth

Tristan Bret

Johannes Bihr

Michael Schnell

Bernd Schindler

Markus Boese

Ralf Schönberger

Friedhelm Panteleit

Tobias Clauss

Heiko Feldmann

Johannes Ruoff

Christian Wojek

Alexander Freytag

Dirk Beyer

Rainer Becker

Jens Oster

Markus Waiblinger

Thomas Scherübl

Ottmar Hoinkis

Pawel Szych

Marion Batz

Michael Jöst

Dajana Cujas

Robert Heberlein

Johannes Schöneberg

Christian Rensing

A method, a device and a computer program for repairing a defect of a mask for lithography, in particular an EUV mask, are described. A method of repairing a defect of a mask for lithography, in particular an EUV mask, comprises the following steps: (a.) carrying out a first repair step on the defect using a first repair dose, wherein the defect transitions from an initial topology to a first defect topology as a result; (b.) determining an influence of the first repair step on the topology of the defect; (c.) determining a second defect topology for the defect, which is intended to be achieved by way of a second repair step on the defect; and (d.) determining a second repair dose for the second repair step, at least in part on the basis of the determined influence of the first repair step on the topology of the defect and the second defect topology. The method may further comprise step (e.) of carrying out the second repair step using the second repair dose.

Method, device and computer program for repairing a mask defect

The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

Method and apparatuses for disposing of excess material of a photolithographic mask

A device for examining and/or processing an element for photolithography with a beam of charged particles, the device including (a) means for acquiring measurement data while the element for photolithography is exposed to the beam of charged particles; and (b) means for predetermining a drift of the beam of charged particles relative to the element for photolithography with a trained machine learning model and/or a predictive filter. The trained machine learning model and/or the predictive filter use(s) at least the measurement data as input data.

Devices and methods for examining and/or processing an element for photolithography

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

Device and method for analyzing a defect of a photolithographic mask or of a wafer

The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.

Apparatus and method for determining a position of an element on a photolithographic mask

The present invention relates to an apparatus for examining and/or processing a sample, said apparatus comprising: (a) a scanning particle microscope for providing a beam of charged particles, which can be directed on a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.

Apparatus and method for examining and/or processing a sample

The present application relates to an apparatus for processing a photolithographic mask, said apparatus comprising: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or the local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence (&#x3c6;) between the time-varying particle beam and a surface of the photolithographic mask.

Apparatus and method for repairing a photolithographic mask

A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.

Methods and devices for examining an electrically charged specimen surface

The present invention relates to a method for analyzing at least one defective location of a photolithographic mask, having the following steps: (a) obtaining measurement data for the at least one defective location of the photolithographic mask; (b) determining reference data of the defective location from computer-aided design (CAD) data for the photolithographic mask; (c) correcting the reference data with at least one location-dependent correction value; and (d) analyzing the defective location by comparing the measurement data to the corrected reference data.

Method and apparatus for analyzing a defective location of a photolithographic mask

Device and method for analysing a defect of a photolithographic mask or of a wafer

The present invention relates to a beam blanker for a scanning particle microscope for blanking a charged particle beam having a beam axis, along which charged particles propagate before entering the beam blanker, wherein the beam blanker comprises: (a) at least one stop having an aperture, through which the charged particle beam can pass; (b) at least one first and one second deflection element, which are each configured to deflect the particle beam from the beam axis in a first and a second direction, respectively, upon a voltage being present; and (c) a deflection controller configured to apply a first AC voltage having a first frequency to the first deflection element and a second AC voltage having a second frequency to the second deflection element, wherein the deflection controller sets a difference frequency between the first and second AC voltages such that pulses of the charged particle beam have a predefined pulse period and during the pulse period outside the pulse duration substantially no charged particles pass through the aperture of the stop.

Beam blanker and method for blanking a charged particle beam

Growing community of inventors

Hanau, Germany

Michael Budach