Cvd, Incorporated

Rohm & Haas Electronic Materials LLC

Shipley Company LLC

Dow Global Technolgoies LLC

Rohm and Haas Company

Tokai Carbon Company, Ltd.

Michael A Pickering

Jitendra Singh Goela

Lee E Burns

Hangyao Wang

Hua Bai

Raymond L Taylor

Nathaniel E Brese

Zlatko X Salihbegovic

Mark Lefebvre

Neil D Brown

James T Fahey

Angelo B Chirafisi

Jamie L Triba

Joseph T Keeley

Melinda S Strickland

Mitch Boudreaux

Debashis Chakraborty

James C MacDonald

Alexander Teverovsky

Heather A G Stern

Vincent DiFilippo

Lee Erich Burns

Jeffery L Kirsch

Thomas Payne

The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Increasing zinc sulfide hardness

A method is directed to increasing the hardness of zinc sulfide. The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Method of increasing zinc sulfide hardness

Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.

Semiconductor processing

An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.

Article having electrically conductive and selectively passivated patterns

An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.

Apparatus and method for producing free-standing materials

An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

Opaque low resistivity silicon carbide

Optical article

An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

Low resistivity silicon carbide

Methods are disclosed for providing reduced particle generating silicon carbide. The silicon carbide articles may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces contamination on semiconductor wafers thus increasing their yield.

A chemical vapor deposited, &#x3b2; phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.

Silicon carbide with high thermal conductivity

Free standing articles of chemical vapor deposited silicon carbide with electrical resistivities of less than 0.9 ohm-cm are provided without substantially degrading its thermal conductivity or other properties.

Growing community of inventors

Dracut, MA, United States of America

Michael A Pickering