Micron Technology Incorporated

Michael A Many

Yuan He

Scott L Light

Michael D Hyatt

Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.

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Meridian, ID, United States of America

Michael A Many