Imec Vzw

Interuniversitair Microelektronica Centrum (imec)

Mia Honor&eacute;

Johan F Nijs

Jozef Szlufcik

J&ouml;rg Horzel

The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate; step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate, the dopant from said solids-based dopant source diffusing directly into said substrate to form a first diffusion region and, at the same time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate to form a second diffusion region in at least some areas of said substrate to form a second diffusion region in at least some areas of said substrate not covered by said pattern; and step 3) forming a metal contact pattern substantially in alignment with said first diffusion region without having etched said second diffusion region substantially.

Semiconductor device with selectively diffused regions

The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate ( ) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate ( ); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate ( ) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate ( ), the dopant from said solids-based dopant source diffusing directly into said substrate ( ) to form a first diffusion region ( ) and, at the time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate ( ) to form a second diffusion region ( ) in at least some areas of said substrate ( ) not covered by said pattern; and step 3) forming a metal contact pattern ( ) substantially in alignment with said first diffusion region ( ) without having etched said second diffusion region ( ) substantially.

Growing community of inventors

Kortenberg, Belgium

Mia Honoré

Growing community of inventors

Kortenberg, Belgium

Mia Honor&eacute;

Mia Honoré