Samsung Sdi Co., Inc.

Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Intellectual Keystone Technology LLC

Mi-Hwa Lim

Min-Seok Oh

Seung-Jae Jung

Czang-Ho Lee

Myung-Hun Shin

Byoung-Kyu Lee

Yuk-Hyun Nam

Joon-Young Seo

Min Cheol Park

Byoung-June Kim

Jung-Tae Kim

Dong-Uk Choi

Dong-Seop Kim

Yun-Seok Lee

Ku-Hyun Kang

Nam-Kyu Song

Se-Jin Chung

Dong-seop Kim

Dong Choi

Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Method of manufacturing photoelectric conversion device

Photoelectric conversion device and manufacturing method thereof

A solar cell includes: a semiconductor substrate having a first surface and a second surface opposite the first surface; uneven patterns disposed on at least one of the first surface and the second surface of the semiconductor substrate; a first impurity layer disposed on the uneven patterns and which includes a first part having a first doping concentration and a second part having a second doping concentration greater than the first doping concentration; and a first electrode which contacts the second part of the first impurity layer and does not contact the first part of the first impurity layer.

Solar cell and method of fabricating the same

Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.

Method of manufacturing photovoltaic device

A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.

Photovoltaic device and method for manufacturing the same

A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.

Transparent conductive layer and method of manufacturing the same

Growing community of inventors

Chungcheongnam-do, South Korea

Mi-Hwa Lim