Globalfoundries Inc.

Mert Karakoy

Dongsuk Park

Guoxiang Ning

Xintuo Dai

Yue Zhou

The present disclosure generally relates to semiconductor structures and, more particularly, to overlay structures and methods of manufacture. The method includes locating a first plurality of offset dummy features in a first layer; locating a second plurality of offset dummy features in a second layer; measuring a distance between the first plurality of offset dummy features and the second plurality of offset dummy features; and determining that the first layer or the second layer is shifted with respect to one another based on the measurement.

Overlay structures

Methodologies for using dummy patterns for overlay target design and overlay control are provided. Embodiments include providing a first dummy pattern on a first layer as an outer overlay target for an integrated circuit (IC); providing a pattern associated with a second dummy pattern on a second layer as a target for measuring overlay; and utilizing a scanning electron microscope (SEM) to obtain an overlay measurement between the first and second dummy patterns.

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Malta, NY, United States of America

Mert Karakoy