Taiwan Semiconductor Manufacturing Comp. Ltd.

Meng-Wei Chou

Shin-Puu Jeng

Po-Yao Chuang

Techi Wong

Po-Hao Tsai

Meng-Liang Lin

Chung-Shi Liu

Hung-Jui Kuo

Chen-Hua Douglas Yu

Yu-Hsiang Hu

Chen-Cheng Kuo

Zi-Jheng Liu

Jo-Lin Lan

Wen-Hsiung Lu

Sih-Hao Liao

Cheng-Chung Lin

Kuo Cheng Lin

Shuo-Mao Chen

Chien Ling Hwang

Ming-Che Ho

Ying-Jui Huang

De-Yuan Lu

Ming-Da Cheng

Chih-Wei Lin

Shih-Hao Liao

A method includes forming an interposer, which includes forming a rigid dielectric layer, and removing portions of the rigid dielectric layer. The method further includes bonding a package component to an interconnect structure, and bonding the interposer to the interconnect structure. A spacer in the interposer has a bottom surface contacting a top surface of the package component, and the spacer includes a feature selected from the group consisting of a metal feature, the rigid dielectric layer, and combinations thereof. A die-saw is performed on the interconnect structure.

Fan-out package with controllable standoff

Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.

Fan-out package with cavity substrate

Semiconductor devices and method of manufacture are provided. In embodiments a conductive connector is utilized to provide an electrical connection between a substrate and an overlying shield. The conductive connector is placed on the substrate and encapsulated with an encapsulant. Once encapsulated, an opening is formed through the encapsulant to expose a portion of the conductive connector. The shield is deposited through the encapsulant to make an electrical connection to the conductive connector.

Semiconductor device including electromagnetic interference (EMI) shielding and method of manufacture

An embodiment a structure including a first semiconductor device bonded to a first side of a first redistribution structure by first conductive connectors, the first semiconductor device comprising a first plurality of passive elements formed on a first substrate, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein, the metallization patterns of the first redistribution structure being electrically coupled to the first plurality of passive elements, a second semiconductor device bonded to a second side of the first redistribution structure by second conductive connectors, the second side of the first redistribution structure being opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on a second substrate, the metallization patterns of the first redistribution structure being electrically coupled to the second plurality of passive elements.

Semiconductor packages and methods of forming same

A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Semiconductor device

In an embodiment, a package includes: a first redistribution structure; a first integrated circuit die connected to the first redistribution structure; a ring-shaped substrate surrounding the first integrated circuit die, the ring-shaped substrate connected to the first redistribution structure, the ring-shaped substrate including a core and conductive vias extending through the core; a encapsulant surrounding the ring-shaped substrate and the first integrated circuit die, the encapsulant extending through the ring-shaped substrate; and a second redistribution structure on the encapsulant, the second redistribution structure connected to the first redistribution structure through the conductive vias of the ring-shaped substrate.

Integrated circuit packages with ring-shaped substrates

A method for forming a chip package structure is provided. The method includes disposing a chip over a redistribution structure. The method includes forming a molding layer over the redistribution structure and adjacent to the chip. The method includes partially removing the molding layer to form a trench in the molding layer, and the trench is spaced apart from the chip.

Chip package structure with molding layer and method for forming the same

Integrated circuit package and method

Growing community of inventors

Zhubei, Taiwan

Meng-Wei Chou