United Microelectronics Corp.

Meng-Chiang Wang

Sheng-Yuan Hsueh

Yi-Chung Sheng

Kuo-Hsing Lee

A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first well and a first dummy cell region. The substrate has a plurality fins disposed therein, and the fins are extended along a first direction. The first well is disposed in the substrate, and a dummy cell region is disposed at a first boundary of the first well. The first dummy cell region includes a first isolation structure and a plurality of first gate structures. The first SDB is disposed in the substrate, along a second direction perpendicular to the first direction to penetrate through one of the fins, and the first gate structures are disposed over the first SDB.

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Tainan, Taiwan

Meng-Chiang Wang