Kla Tencor Corporation

Kla-Tencor Technologies Corporation

Ebara Corporation

Kla-Technologies Corporation

Mehran Nasser-Ghodsi

Robert Haynes

Rudy Flores Garcia

Christopher Sears

Ming Lun Yu

Tomas Plettner

Mehdi Vaez-Iravani

Gabor D Toth

Niles MacDonald

Khashayar Shadman

Alexander Jozef Gubbens

John Gerling

Garrett Pickard

Yehiel Gotkis

Stanley E Stokowski

Alan D Brodie

Stuart L Friedman

Marco Tortonese

Anne Testoni

Doug Keith Masnaghetti

Kenneth Krzeczowski

Mark Borowicz

Christopher Malcolm Stanley Sears

Vadim G Dudnikov

Stanislaw Marek Borowicz

Michael Cull

Sergey D Lopatin

Guoheng Zhao

David Lewis Adler

Ying Wang

Kenneth Harry Purser

Marvin Farley

Hilton Frank Glavish

David Aitan Soltz

Matthew Lent

Prashant Aji

Mark Allen Neil

John W Coburn

Ye Yang

Chris Huang

Aron Welk

Tzu-Chin Chuang

Tzu Chin Chuang

Andrew Wittkower

Thomas Plettner

Dave Bakker

Harold Winters

Kenneth J Krzeckzowski

Phil Wood

Steve Oestreich

Jeffrey Reichert

S Mark Borowicz

Mathew H Lent

Edward Wagner

Wo-Tak Wu

Felipe Fuks

R Chris Burns

Harrison Chin

Gaylord C Noblitt, Iii

Christopher M Sears

A multi-column scanning electron microscopy (SEM) system is disclosed. The SEM system includes a source assembly. The source assembly includes two or more electron beam sources configured to generate a plurality of electron beams. The source assembly also includes two or more sets of positioners configured to actuate the two or more electron beam sources. The SEM system also includes a column assembly. The column assembly includes a plurality of substrate arrays. The column assembly also includes two or more electron-optical columns formed by a set of column electron-optical elements bonded to the plurality of substrate arrays. The SEM system also includes a stage configured to secure a sample that at least one of emits or scatters electrons in response to the plurality of electron beams directed by the two or more electron-optical columns to the sample.

Multi-column scanning electron microscopy system

A field emission device comprises one or more emitter elements, each having a high aspect ratio structure with a nanometer scaled cross section; and one or more segmented electrodes, each surrounding one of the one or more emitters. Each of the one or more segmented electrodes has multiple electrode plates. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Electron emitter device with integrated multi-pole electrode structure

Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An inspection tool for detecting electromagnetic waveforms is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

Apparatus and methods for inspecting extreme ultra violet reticles

Embodiments of this invention use multi-layer ceramic substrate with one or more hermetically sealed and filled metal vias with smaller pitch and size in combination with flexible printed circuit cables and interposers to provide a custom electric feed through for vacuum to atmosphere chambers. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Multi-layer ceramic vacuum to atmosphere electric feed through

A metrology system is configured to provide visual inspection of a workpiece, three-dimensional magnetic field map, and height measurement. A stage is configured to bring points of interest at the workpiece under the desired tool for measurement. The optical field, magnetic field, and height information can be used independently or together in order to correlate defects in the manufacturing process of the workpiece. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Apparatus and method for optical inspection, magnetic field and height mapping

A charged particle detection device has an active portion for configured to produce a signal in response secondary charged particles emitted from a sample landing on the active portion. The active portion is shaped to accommodate an expected asymmetric pattern of the secondary charged particles at a detector. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Asymmetrical detector design and methodology

Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An optical inspection tool is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

One embodiment relates to an electron beam apparatus. The apparatus includes a source for generating an incident electron beam, an electron lens for focusing the incident electron beam so that the beam impinges upon a substrate surface and interacts with surface material so as to cause secondary emission of scattered electrons, and a detector configured to detect the scattered electrons. The apparatus further includes an advantageous device configured to trap the scattered electrons which are emitted at sharp angles relative to the sample surface plane of the substrate surface. Other embodiments are also disclosed.

Sharp scattering angle trap for electron beam apparatus

Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis

A permanent magnetic lens array for charged-particle focusing includes a first sheet of soft magnetic material, wherein the first sheet of soft magnetic material includes a plurality of snorkel cone protrusions arranged in an array pattern, wherein each snorkel cone is axially symmetric and includes an opening passing from a first surface of the first sheet of soft magnetic material to a second surface of soft magnetic material, and a plurality of permanent magnetic elements, wherein each permanent magnetic element is axially symmetric and arranged concentrically with a snorkel cone of the first sheet of soft magnetic material, wherein the snorkel cones of the first sheet of soft magnetic material and the plurality of permanent magnetic elements are configured to form a plurality of magnetic lenses, wherein each magnetic lens has a magnetic field with an axial component oriented perpendicular to the first surface of the soft magnetic material.

Permanent magnet lens array

System and methods for decomposing an Auger electron spectrum into elemental and chemical components, includes conditioning and input spectrum to generate a normalized input spectrum; determining statistical correlation between the normalized input spectrum and stored elemental spectral signatures; and characterizing elemental or chemical species in the input spectrum from the statistical correlation, wherein said conditioning the input spectrum includes estimating a background signal of non-Auger electrons in the input spectrum and subtracting the estimated background signal from the input spectrum.

Auger elemental identification algorithm

A background reduction system may include, but is not limited to: a charged particle source configured to generate a charged-particle beam; a louvered structure including one or more apertures configured to selectively transmit charged particles according to their angle of incidence; and a charged-particle detector configured to receive charged particles selectively transmitted by the louvered structure.

Background reduction system including louver

One embodiment disclosed relates to an apparatus forming an electrical conduction path through an insulating layer on a surface of a substrate. A first radiation source is configured to emit radiation to a first region of the insulating layer, and a first electrical contact is configured to apply a first bias voltage to the first region. A second radiation source is configured to emit radiation to a second region of the insulating layer, and a second electrical contact is configured to apply a second bias voltage to the second region. The conductivities of the regions are increased by the radiation such that conductive paths are formed through the insulating layer at those regions. In one implementation, the apparatus may be used in an electron beam instrument. Another embodiment relates to a method of forming an electrical conduction path through an insulating layer. Other embodiments, aspects and features are also disclosed.

Apparatus and methods for forming an electrical conduction path through an insulating layer

Contamination may be removed from a field emitter unit during operation of the emitter unit in an environment at a pressure that lies within a range between 10torr and 10torr. At regular predetermined intervals an electron beam from an emitter tip may be deflected away from a path through a beam defining aperture and onto an electron collector. An electron beam current to the electron collector may be determined and the emitter unit may be flash heated if the current to the electron collector is below a threshold. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Electron generation and delivery system for contamination sensitive emitters

One embodiment disclosed relates to an electron source for generating an electron beam. The electron source includes an electron emitter having a tip from which an electron beam is extracted. The electron further includes a non-planar extractor with an extractor opening and a built-in beam-limiting aperture. The extractor opening is larger than the beam-limiting aperture, and central axes of both the extractor opening and the beam-limiting aperture are aligned with the tip along a beam axis. Another embodiment relates to a method of generating an electron beam using an electron source having a non-planar extractor. Another embodiment relates to an array of electron sources for generating an array of electron beams. The array of electron sources includes an array of electron emitters and an array of non-planar extractor structures. Other embodiments, aspects and features are also disclosed.

Non-planar extractor structure for electron source

Growing community of inventors

Hamilton, MA, United States of America

Mehran Nasser-Ghodsi