Ebara Corporation

Megumi Maruyama

Akihisa Hongo

Ryoichi Kimizuka

Mizuki Nagai

Hiroyuki Kaneko

Hiroyuki Ueyama

Junitsu Yamakawa

Kanji Ohno

Yasushi Isayama

Koji Mishima

Hiroaki Inoue

Naoaki Ogure

Satoshi Sendai

Tetsuma Ikegami

Shuichi Okuyama

The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

Method of managing a plating liquid used in a plating apparatus

A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

Substrate plating method and apparatus

A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits () to fill the fine pits with a metal () and includes performing a first plating process () by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process () by immersing the substrate in a second plating solution having a composition superior in leveling ability.

Method of measuring the concentration of a leveler in a plating liquid

A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits ( ) to fill the fine pits with a metal ( ) and includes performing a first plating process ( ) by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process ( ) by immersing the substrate in a second plating solution having a composition superior in leveling ability.

Method for plating a first layer on a substrate and a second layer on the first layer

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Kanagawa, Japan

Megumi Maruyama