Hayashi Pure Chemical Ind., Ltd.

Sanyo Electric Co., Ltd.

Sanyo Semiconductor Co., Ltd.

Sanyo Semiconductor Manufacturing Co., Ltd.

Mayumi Kimura

Tsuguhiro Tago

Tetsuo Aoyama

Atsushi Matsui

Tomotake Matsuda

This invention is concerning an etchant composition used to etch a silicon-containing film formed on a target substrate. The etchant composition includes at least one selected from the group consisting of an organic compound containing a hydroxyl group, an organic compound containing a carbonyl group, an inorganic acid and inorganic salt, hydrofluoric acid, ammonium fluoride and an organic acid.

Etchant composition and etching method

A metal film such as an aluminum film or an aluminum alloy film is etched with good controllability, preventing a resist from bleeding, to have a proper taper configuration and superior flatness. A water solution containing a phosphoric acid, a nitric acid, and an organic acid salt is used as an etching liquid composition used to etch the metal film on a substrate. The organic acid salt is composed of one kind selected from a group consisting of an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxicarboxylic acid, an aromatic monocarboxylic acid, an aromatic polycarboxylic acid and an aromatic oxycarboxylic acid, and one kind selected from a group consisting of an ammonium salt, an amine salt, a quaternary ammonium salt, and an alkali metal salt. In addition, a concentration of the organic acid salt ranges from 0.1% to 20% by weight. In addition, the etching liquid composition according to the present invention is used when the metal film is formed of aluminum or an aluminum alloy.

Etching liquid composition

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Matsuzaka, Japan

Mayumi Kimura