Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Mayuka Osaki

Makoto Suzuki

Takuma Yamamoto

Takahiro Nishihata

Chie Shishido

Kenji Yasui

Maki Tanaka

Toshiyuki Yokosuka

Yusuke Abe

Daisuke Bizen

Hirohiko Kitsuki

Yusuke Iida

Maki Kimura

Akira Hamaguchi

Norio Hasegawa

Yuji Takagi

Hideyuki Kazumi

Atsushi Miyamoto

Fumihiro Sasajima

Yoshinori Momonoi

Hiroaki Kasai

Wei Sun

Hitoshi Namai

Chihiro Ida

The invention provides an observation system capable of observing a formation position of a target shape that cannot be directly irradiated with an electron beam. The observation system includes an electron microscope and a computer. The electron microscope is configured to irradiate, with an electron beam, a first surface position on a specimen, which is different from a formation position of a target shape on the specimen, detect predetermined electrons that are scattered in the specimen from the first surface position and that escape from the formation position of the target shape to an outside of the specimen, and output the predetermined electrons as a detection signal. The computer is configured to output one or more values related to the target shape based on the detection signal.

Observation system, observation method, and program

A charged particle beam deviceincludes: a plurality of detectorsfor detecting a signal particleemitted from a sampleirradiated with a charged particle beamand converting the detected signal particleinto an output electrical signal; an energy discriminatorprovided for each detectorand configured to discriminate the output electrical signalaccording to energy of the signal particle; a discrimination control blockfor setting an energy discrimination condition of each of the energy discriminators; and an image calculation blockfor generating an image based on the discriminated electrical signal. The discrimination control blocksets energy discrimination conditions different from each other among the plurality of energy discriminators

Charged particle beam device

A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

Scanning electron microscopy system and pattern depth measurement method

In the present invention, an electro-optical condition generation unit includes: a condition setting unit that sets, as a plurality of electro-optical conditions, a plurality of electro-optical conditions in which the combinations of the aperture angle and the focal-point height for an electron beam are different; an index calculating unit that determines a measurement-performance index in the electro-optical conditions set by the condition setting unit; and a condition deriving unit that derives an electro-optical condition, including an aperture angle and a focal-point height, so that the measurement-performance index determined by the index calculating unit becomes a prescribed value.

Electronic microscope device

An electron microscope apparatus includes a detection unit that detects reflected electrons reflected from a sample when the sample is irradiated with primary electrons emitted by a primary electron generation unit (electron gun), an image generation unit that generates an image of a surface of the sample with the reflected electrons based on output from the detection unit, and a processing unit that generates a differential waveform signal of the image generated by the image generation unit, processes the image by using information of the differential waveform signal, and measures a dimension of a pattern formed on the sample.

Electron microscope apparatus, inspection system using electron microscope apparatus, and inspection method using electron microscope apparatus

The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

Pattern cross-sectional shape estimation system and program

To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.

Scanning electron microscope and calculation method for three-dimensional structure depth

A scanning electron microscope capable of properly determining a step of a step pattern formed on a sample regardless of combination of material of a groove of the step pattern and material of a projection of the step pattern, the scanning electron microscope includes a beam source, a detection unit having a first detection unit that detects a secondary electron emitted from the sample at an angle between an optical axis direction of the primary electron beam which is equal to or less than a predetermined value, and a second detection unit that detects a secondary electron emitted from the sample at an angle between the optical axis direction of the primary electron beam which is greater than the predetermined value, and a processing unit to obtain information on the step pattern using the information on a ratio between signals outputted from the first and the second detection unit.

Scanning electron microscope

An pattern evaluation method includes a step of estimating imaging deviation allowed to evaluate an overlay position on one or more evaluation point candidates based on pattern layout information, a step of deciding one or more evaluation points from among the evaluation point candidates based on the allowed imaging deviation, a step of deciding an imaging sequence for imaging the selected evaluation point, and a step of evaluating an overlay position between first and second patterns based on an image obtained by imaging the evaluation point according to the imaging sequence.

Pattern evaluation method and pattern evaluation device

The present invention aims at proposing a library creation method and a pattern shape estimation method in which it is possible, when estimating a shape based on comparison between an actual waveform and a library, to appropriately estimate the shape. As an illustrative embodiment to achieve the object, there are proposed a method of selecting a pattern by referring to a library, a method of creating a library by use of pattern cross-sectional shapes calculated through an exposure process simulation in advance, and a method for selecting a pattern shape stored in the library.

Growing community of inventors

Tokyo, Japan

Mayuka Osaki