Intel Corporation

Max Wei

Stephen M Cea

Aaron D Lilak

Cory E Weber

Mark Armstrong

Sing-Chung Hu

Giuseppe Curello

Been-Jon K Woo

In general, in one aspect, a method includes forming a spacer layer over a substrate having patterned stacks formed therein and trenches between the patterned stacks. A sacrificial polysilicon layer is deposited over the substrate to fill the trenches. A patterning layer is deposited over the substrate and patterned to define contact regions over at least a portion of the trenches. The sacrificial polysilicon layer is etched using the patterned patterning layer to form open regions.

Self-aligned contact formation utilizing sacrificial polysilicon

A method and apparatus to form a high-concentration, indium-fluorine retrograde well within a substrate. The indium-fluorine retrograde well includes an indium concentration greater than about 3E18/cm3.

High concentration indium fluorine retrograde wells

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San Jose, CA, United States of America

Max Wei