Advanced Technology Materials, Inc.

Versum Materials Us, LLC

Entegris, Inc.

Cabot Microelectronics Corporation

Kerr Corporation

Matthias Stender

Chongying Xu

Jeffrey F Roeder

Tianniu Chen

William Hunks

Thomas H Baum

Bryan Clark Hendrix

Philip S H Chen

Gregory T Stauf

Xiaobo Shi

Melissa A Petruska

Dnyanesh Chandrakant Tamboli

Maitland Gary Graham

Agnes Derecskei

Bradley James Brennan

Mark Leonard O'Neill

Steven Grumbine

Christos Angeletakis

Lin Fu

Reinaldo Mario Machado

Thomas M Cameron

Weimin Li

Glenn Whitener

Chul Woo Nam

Blake J Lew

Chun Lu

Mark Leonard O'neill

Philip SH Chen

Shi Xiaobo

Chandrakant Tamboli Dnyanesh

Jeffrey R Roeder

This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Tungsten chemical mechanical polishing for reduced oxide erosion

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Additives are used to reduce the dishing on large and small feature sizes (large bond pad as well as fine line structures) without retarding the tungsten removal rate.

Dishing reducing in tungsten chemical mechanical polishing

A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

Additives for barrier chemical mechanical planarization

Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH&#x3e;7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

Stop-on silicon containing layer additive

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of GeSbTechalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Tellurium compounds useful for deposition of tellurium containing materials

Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Antimony and germanium complexes useful for CVD/ALD of metal thin films

The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co, Au, Ag, Pt, Hg, Cr, Fe, Ce, or Cu, and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.

Chemical-mechanical polishing composition containing zirconia and metal oxidizer

A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350&#xb0; C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Low temperature deposition of phase change memory materials

The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.

GST CMP slurries

Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.

Precursor compositions for ALD/CVD of group II ruthenate thin films

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Phoenix, AZ, United States of America

Matthias Stender