International Business Machines Corporation

Globalfoundries Inc.

Matthew T Tiersch

Eric Jeffrey White

Timothy Charles Krywanczyk

Graham M Bates

Eva A Shah

S Jay Chey

Cornelia Kang-I Tsang

Michael T Brigham

Mohammed S Shaikh

Jason P Ritter

Joseph K V Comeau

Joseph K Comeau

Douglas Keith Sturtevant

Marina M Katsnelson

Lawrence D David

Paul M Feeney

Thomas L McDevitt

Paul H Smith, Jr

Richard John Lebel

Rock Nadeau

Jose L Cruz

Charles A McKinney

Steven James Messier

Timothy J Rickard, Jr

Daniel D Desorcie

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Slurry for chemical-mechanical polishing of metals and use thereof

A silicon chicklet pedestal for use in a wafer-level test probe of a wafer is provided and includes a main body, first and second opposing faces, and an array of vias formed through the main body to extend between the first and second faces, through which pairs of leads, respectively associated with each via at the first and second faces, are electrically connectable to one another.

Silicon chicklet pedestal

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Slurry for chemical-mechanical polishing of copper and use thereof

A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

Solution for forming polishing slurry, polishing slurry and related methods

A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1 H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.

CMP method

Method of forming silicon chicklet pedestal

A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate, liters and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers

A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

Chemical mechanical polishing slurry and method for polishing metal/oxide layers

A method and apparatus for polishing a semiconductor wafer using a polishing pad. Circumferential rings of alternating compressibility of hard and soft/sponge-like material are located in the polishing pad. The concentric rings may also be located off-center from the geometric center of the polishing pad.

Composite polish pad for CMP

An apparatus for polishing a semiconductor wafer is provided which includes a wafer carrier having on its lower surface a non-uniform surface structure means to vary the force against a wafer during a polishing operation so that the polishing is enhanced and imparts a planar surface across the polished wafer. Preferred non-uniform surface structure means include use of a wafer carrier having on its lower surface a backing film having a first central portion having a predetermined compressibility and a second peripheral portion having a different compressibility than the first portion. Another non-uniform surface structure means to vary the force against the wafer comprises a wafer carrier having on its lower surface a raised circumferential region around the periphery of the carrier.

CMP wafer carrier for preferential polishing of a wafer

A method and apparatus for polishing a semiconductor wafer using a polishing pad. The polishing pad contains circumferential grooves which are located off center from the geometric center of the polishing pad.

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Essex Junction, VT, United States of America

Matthew T Tiersch