Applied Materials, Inc.

Other

Matthew L Miller

Daniel John Hoffman

Steven C Shannon

Kartik Ramaswamy

Kenneth S Collins

Douglas A Buchberger, Jr

James D Carducci

Yan Ye

Kallol Bera

James P Cruse

Jang-Gyoo Yang

Dmitry Lubomirsky

Andrew Nguyen

Kien Nai Chuc

Jennifer Y Sun

Hiroji Hanawa

Shankar Venkataraman

Shahid Rauf

Walter R Merry

Lawrence Wong

Kang-Lie Chiang

Subhash Deshmukh

Jang Gyoo Yang

Troy S Detrick

Robert B Hagen

Qiwei Liang

Xinglong Chen

Dan Katz

Xiaoye Zhao

Gerardo Delgadino

Michael S Barnes

Tetsuya Ishikawa

Shiang-Bau Wang

Soonam Park

Toan Q Tran

Michael C Kutney

Adib M Khan

Hanh D Nguyen

Chunshi Cui

Heeyeop Chae

Jay Pinson

Nitin K Ingle

Paul Brillhart

Jingmei Liang

Gerald Zheyao Yin

Kin Pong Lo

Xiaolin C Chen

Xiaoping Zhou

Olga Regelman

Melissa Hagen

Stephen Thai

David McParland

A combination golf towel holder both clamps the towel and provides for moistening the towel while it is clamped. The device has a front portion that includes an upper part that includes a reservoir and a lower clamp portion. A generally planar back plate that is attached to the upper part of the front portion, and has a lower jaw part that acts with the lower clamp portion to hold the towel. Water or another aqueous liquid is injected via an orifice in the back of the front portion when a squeeze bulb is depressed. The unit can be hung from a golf bag or golf cart so the towel is ready for use during play on the golf course.

Towel clamp and moisturizer for golf

Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Flow control features of CVD chambers

Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

Semiconductor processing system and methods using capacitively coupled plasma

Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

Plasma source design

Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H) and nitrogen (N) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.

Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio

In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.

Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator

A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.

Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator

Methods of forming a silicon-and-nitrogen-containing layers and silicon oxide layers are described. The methods include the steps of mixing a carbon-free silicon-containing precursor with plasma effluents, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layers may be made flowable or conformal by selection of the flow rate of excited effluents from a remote plasma region into the substrate processing region. The plasma effluents are formed in a plasma by flowing inert gas(es) into the plasma. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.

Dielectric film formation using inert gas excitation

A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal.

Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator

A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

Etching chamber having flow equalizer and lower liner

Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Apparatus for multiple frequency power application

A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a chamber body having an interior volume, a substrate support disposed in the interior volume and a gas distribution assembly having an asymmetrical distribution of gas injection ports. In another embodiment, a method for vacuum processing a substrate is provided that includes disposing a substrate on a substrate support within in a processing chamber, flowing process gas into laterally into a space defined above a gas distribution plate positioned in the processing chamber over the substrate, and processing the substrate in the presence of the processing gas.

Gas flow diffuser

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Fremont, CA, United States of America

Matthew L Miller