Applied Materials, Inc.

Lam Research Corporation

Applied Materils, Inc.

Matthew Fenton Davis

Lei Lian

Thorsten B Lill

Michael D Willwerth

Kenneth J Bahng

Andrei Ivanovich Netchitaliouk

Yasuhiro Uo

James D Carducci

James S Papanu

Mark Naoshi Kawaguchi

Douglas R McAllister

Travis Morey

Scott M Williams

Quentin Ernie Walker

David Evans

John M Yamartino

Steven H Kim

Barbara Schmidt

Frank F Hooshdaran

Kenneth J Bhang

Apparatuses and methods for improved substrate defect detection is provided. Substrate defects may be detected, possibly with defect detection equipment such as laser metrology equipment. Defects smaller than the detection limit of the detection equipment may be decorated with a layer of material to increase the effective sizes of the defects. The thickness and composition of the material deposited may be tuned depending on the composition of the substrate and the defects. The composition of the detected defects may be identified with defect identification equipment. The defect identification equipment may be an electron generating apparatus and the composition of the defects may be identified from the interaction of the electrons with the defect. The deposited material may be removed either before or during the defect identification phase to aid in the identification of the defect composition.

Integrated substrate defect detection using precision coating

A coil assembly includes an encapsulation structure having a coil placement region formed therein. One or more access ports are formed through the encapsulation structure to the coil placement region. The coil placement region is hermetically sealed by the encapsulation structure outside of the one or more access ports. A coil device is disposed within the coil placement region within the encapsulation structure. Terminals of the coil device are accessible through the one or more access ports formed through the encapsulation structure. The encapsulation structure is formed of a material suitable for exposure to a plasma. The coil assembly can be disposed inside of a plasma processing chamber and above a support structure, such that the coil assembly is in exposure to a plasma generated between the coil assembly and the support structure by radiofrequency power supplied to the coil device within the coil assembly.

Immersible plasma coil assembly and method for operating the same

An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.

Apparatus for efficient removal of halogen residues from etched substrates

A method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber. The apparatus may include an optical assembly external to the processing chamber configured to focus a relatively large optical spot over a relatively large working distance to acquire a TE and TM spectra from a periodic array on the workpiece. The workpiece may be disposed in the processing chamber with an arbitrary orientation which is first determined via a reflectance measurement. TE and/or TM spectra may then be acquired by initiating a periodic triggering of a flash lamp based on the determined workpiece orientation to account for variation in placement of the workpiece within the processing chamber. The periodic array from which spectra are collected may be a memory array being fabricated in a semiconductor wafer.

Method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber

A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.

Method and system for monitoring an etch process

An apparatus for adaptive self-aligned dual patterning and method thereof. The method includes providing a substrate to a processing platform configured to perform an etch process and a deposition process and a metrology unit configured for in-vacuo critical dimension (CD) measurement. The in-vacuo CD measurement is utilized for feedforward adaptive control of the process sequence processing platform or for feedback and feedforward adaptive control of chamber process parameters. In one aspect, a first layer of a multi-layered masking stack is etched to form a template mask, an in-vacuo CD measurement of the template mask is made, and a spacer is formed, adjacent to the template mask, to a width that is dependent on the CD measurement of the template mask.

Within-sequence metrology based process tuning for adaptive self-aligned double patterning

An endpoint detection method for detecting an endpoint of a process comprises determining a reflectance spectrum of light reflected from a substrate, the light having a wavelength, processing the substrate while light having the wavelength is reflected from the substrate, detecting light having the wavelength after the light is reflected from the substrate, generating a signal trace of the intensity of the reflected light and normalizing the signal trace with the reflectance spectrum of the light. The normalized signal trace can then be evaluated to determine an endpoint of the process.

Determining endpoint in a substrate process

A method for determining the flow rate of a gas includes measuring a first concentration of a calibration gas provided to the process chamber at a first pressure and temperature by directing infrared radiation into the process chamber and monitoring a first amount of infrared radiation absorbed by the calibration gas. A mixture of a second gas and the calibration gas is provided to the process chamber while maintaining the first pressure and temperature. A second concentration of the calibration gas in the mixture is measured by directing infrared radiation into the process chamber and monitoring a second amount of infrared radiation absorbed by the calibration gas. A flow rate of the second gas is calculated by comparing the first and second concentrations of the calibration gas. In one embodiment, the calibration gas and the second gas may not absorb the infrared radiation at the same wavelength.

Method and apparatus for calibrating mass flow controllers

Embodiments described herein provide a method and apparatus for obtaining process information in a substrate manufacturing process using plasma. In one embodiment, a chamber is provided having one or more optical metrology modules that are positioned such that optical energy from the plasma process is detected at substantially orthogonal angles. Metrics derived from detected optical energy may be used for endpoint determination, substrate temperature, and monitoring of critical dimensions on the substrate.

Advanced process sensing and control using near infrared spectral reflectometry

An endpoint detection method for detecting an endpoint of a process comprises reflecting polychromatic light from a substrate, the polychromatic light having a plurality of wavelengths. A plurality of light beams having different wavelengths are generated from the reflected polychromatic light. A wavelength of light is determined from the plurality of light beams, at which a local intensity of the reflected light is maximized.

A method and apparatus for measuring a substrate temperature during a thermal process are provided. In one embodiment, an apparatus for measuring a substrate temperature during a thermal process includes an evacutable chamber, a substrate heater positioned to heat a substrate disposed in the chamber, and a sensor positioned to receive energy transmitted through the substrate while the substrate is heated by the substrate heater, wherein the sensor is configured to detect a metric indicative of transmittance. In another embodiment, a method for measuring a substrate temperature includes heating a substrate disposed in a chamber, detecting a change in transmittance of the substrate while heating, and determining a temperature of the substrate based on the change in transmittance.

Substrate temperature measurement by infrared transmission

A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.

Integrated method for removal of halogen residues from etched substrates in a processing system

The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.

Method for removing a halogen-containing residue

A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.

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Brookdale, CA, United States of America

Matthew Fenton Davis