Tessera LLC

Matthew E Colburn

Lawrence Alfred Clevenger

Sivananda K Kanakasabapathy

Christopher J Penny

Nelson M Felix

Nicole A Saulnier

Sean D Burns

Roger A Quon

A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

Self aligned pattern formation post spacer etchback in tight pitch configurations

Growing community of inventors

Schenectady, NY, United States of America

Matthew E Colburn