Nuflare Technology, Inc.

Masayuki Tsukui

Yasushi Iyechika

Hajime Nago

Kiyotaka Miyano

Hideshi Takahashi

Yoshitaka Ishikawa

Provided is a vapor phase growth method according to an embodiment including loading a first substrate into a reaction chamber, generating a first mixed gas by mixing an indium containing gas, an aluminum containing gas, and a nitrogen compound containing gas, and forming a first indium aluminum nitride film on the first substrate by supplying the first mixed gas into the reaction chamber, the first substrate being rotated at a first rotation speed of 300 rpm or more.

Vapor phase growth method

A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate.

A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion having ring-shape and an inner portion having ring-shape, the inner portion including a substrate mounting surface positioned below an upper surface of the outer portion, the substrate mounting surface being a curved surface, the curved surface having convex regions and concave regions repeated in a circumferential direction, the curved surface having six-fold rotational symmetry, and a heater provided below the ring-shaped holder.

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Yokohama, Japan

Masayuki Tsukui