Tokyo Electron Limited

Masayuki Nasu

Kenji Suzuki

Kenji Matsumoto

Takanobu Hotta

Koji Maekawa

Yu Nunoshige

Masaki Sano

Junya Miyahara

Sakae Nakatsuka

Tomoyuki Sakoda

Tomohisa Maruyama

There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiHgas treatment with respect to the target substrate having the base film formed thereon by supplying an SiHgas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

Tungsten film forming method and storage medium

There is provided a film forming apparatus including gas supply paths, retaining units, valves, a purge gas supply unit and a control unit. The control unit is configured to implements a film forming process for sequentially performing operations of actuating the valves such that reaction gases are retained in the retaining units, the internal pressures of the retaining units are increased and then the reaction gases are supplied from the retaining units into the process chamber, and a purging process for subsequently repeating, a plurality number of times, operations of actuating the valves such that the purge gas is retained in the retaining units, the internal pressures of the retaining units are increased to a pressure higher than the internal pressures of the retaining units which is increased in the film forming process, and then the purge gas is supplied from the retaining units into the process chamber.

Film forming apparatus, gas supply device and film forming method

A method for fabricating a semiconductor device includes the steps of forming a PbTiOx film having a predominantly (111) orientation on a lower electrode as a nucleation layer by an MOCVD process with a film thickness exceeding 2 nm, and forming a PZT film having a predominantly (111) orientation on the nucleation layer, wherein the step of forming the PbTiOx film is conducted under an oxygen partial pressure of less than 340 Pa.

Method for manufacturing semiconductor device and computer storage medium

A deposition method for supplying process gases into an evacuated processing vessel to deposit a metal tungsten film on the surface of an object to be processed. The processing gases include tungsten hexafluoride gas, hydrogen gas, and a reducing gas which has a richer reducing property than that of the hydrogen gas, the amount of the reducing gas being smaller than that of the hydrogen gas. Thus, it is possible to form a metal tungsten film without increasing stress in the film so much even in a low temperature region of about 400&#xb0; C. and without decreasing a deposition rate so much.

Method for forming metallic tungsten film

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Nirasaki, Japan

Masayuki Nasu