Hitachi, Ltd.

Renesas Technology Corp.

Masayuki Nagasawa

Kan Yasui

Yoshio Kawamura

Souichi Katagiri

Ui Yamaguchi

Yoshio Homma

Shigeo Moriyama

Kikuo Kusukawa

Masahiko Sato

Kunio Harada

Satoshi Osabe

Kazumasa Odani

In the control of feedwater to the steam generator in a power plant comprising one steam generator and a plurality of turbine plants, the water level in the steam generator and the flow rate balance between the steam flow rate and the feedwater flow rate of each turbine plant will be stabilized. In the power plant comprising one steam generator and a plurality of turbine plants combined, the control in the feedwater controller of the first turbine plant (main turbine plant) is normal control, that is, to control the feedwater control valve through the use of detection signals from the steam generator level detecting unit, the main steam flow detecting unit and the feedwater flow detecting unit of the first turbine plant, and the control in the feedwater controller of the second turbine plant (duplicate turbine plant) is to control the feedwater control valve through the use of a detection signal from the condenser level detecting unit of the first turbine plant.

Steam generator feedwater control system for power plant

In order to polish an insulating film, a cerium oxide polishing agent (ceria slurry) is used. The ceria slurry is composed of cerium oxide powder containing Na, Ca, Fe, and Cr concentration of which is less than 10 ppm. Fragile inorganic and organic insulating films formed at relatively low temperatures can be polished without degrading the characteristics of the semiconductor element due to Na diffusion.

Polishing agent and polishing method

In a production process of a semiconductor device, planarizing of a wafer surface pattern can be performed to attain high planarity, good uniformity in the removal amount and improved controllability. This process include a step of planarizing a semiconductor wafer, from which at least two different films have been exposed, by polishing with a grindstone and a dispersant-containing processing liquid.

Planarizing method of semiconductor wafer and apparatus thereof

The problem of non-uniform polishing properties of a circumferential surface area of a substrate, so-called edge sagging phenomenon, is solved. When a thin film formed on a top surface of the substrate is polished while holding a back surface of the substrate, local stress at a circumferential end of the substrate is reduced by a guide installed so as to surround the substrate. Also, a deformation of the outer circumferential end portion of the substrate is reduced by a recessed groove provided on the guide. Since a thin film formed on the surface can be polished to be flat throughout the surface of the substrate without an occurrence of non-uniform polishing properties of the outer circumferential surface area of the substrate, so-called edge sagging phenomenon, a high-performance semiconductor device can be manufactured at a high yield and low costs.

Method for polishing surface of semiconductor device substrate

A processing method capable of presenting the processing condition with a high accuracy to improve the productivity, including a step of applying a first processing to a first substrate and a step of applying a second processing to the first substrate or the second processing to a second substrate and determining a correlation function for each of in-plane positions as the data for the difference in a plurality of processing steps to each of the in-plane positions in view of on the in-plain distribution data to the in-plane position of each of the substrate as a result of the plurality of processings, calculating the in-plain distribution characteristics of the substrate under a desired processing condition in view of the correlation function and processing the substrate based on the in-plain distribution characteristics.

Processing method, measuring method and producing method of semiconductor devices

The invention provides a process apparatus including a wafer holder, and a process method, in which high planarization performance, scratch free process, narrow edge exclusion and high uniformity can be maintained for more than 10,000 processed wafers. The invention is achieved by providing a unit for keeping a retainer and surface of a polishing wheel non-contact with each other and controlling the gap within a certain range and by setting compression strength of the retainer at more than 3,000 kg/cm .

Method and apparatus for planarizing semiconductor device

An organic insulating film is polished utilizing a polishing agent containing cerium oxide particles (a ceria slurry). The ceria slurry is composed of cerium oxide powder containing a total concentration of Na, Ca, Fe, and Cr of less than 10 ppm. Fragile inorganic and organic insulating films formed at relatively low temperatures can be polished without degrading characteristics of a semiconductor element having such films thereon, due to, e.g., Na diffusion.

Growing community of inventors

Kawagoe, Japan

Masayuki Nagasawa