Jsr Corporation

Other

Kabushiki Kaisha Toshiba

Japan Synthetic Rubber Co., Ltd.

Masayuki Motonari

Masayuki Hattori

Nobuo Kawahashi

Akira Iio

Hiroyuki Yano

Gaku Minamihaba

Tomohisa Konno

Yoshio Takimoto

Katsuya Okumura

Yukiteru Matsui

Kazunori Takanashi

Satoru Murakami

Eiichirou Kunitani

Tomikazu Ueno

Takashi Mori

Nobuo Hayasaka

Junya Suzuki

Hisashi Nakagawa

Tatsuya Sakai

Akihiko Morikawa

Kou Hasegawa

Shin-ya Nakafuji

Hiromitsu Tanaka

Kazuo Nakahara

Hiroyuki Miyauchi

Tooru Kimura

Hirotaka Shida

Yuushi Matsumura

Shoei Tsuji

Shinya Nakafuji

Akihiro Takemura

Atsushi Baba

Takashi Matsuda

Satoshi Dei

Kazuhito Uchikura

Shunsuke Kurita

Masahiro Yamamoto

Takahiro Iijima

Kazuhiko Koumura

Katsuhisa Mizoguchi

Katsumi Oka

Masashi Shimakage

Yuuji Namie

Yuugo Tai

Hiroyuki Kabushiki Kaisha Toshiba Yano

Gaku c/o Intellectual Property Division Minamihaba

Katsuya c/o Octec Inc Okumura

Yukiteru Kabushiki Kaisha Toshiba Matsui

An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a &#x3b2;-diketone, a &#x3b2;-keto ester, a &#x3b2;-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), Rrepresents an organic group having a valency of n. X represents &#x2014;OH, &#x2014;COOH, &#x2014;NCO or &#x2014;NHR, wherein Rrepresents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.RX)&#x2003;&#x2003;(1)

Inorganic film-forming composition for multilayer resist processes, and pattern-forming method

A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0&#xb0; C. Rand Reach independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. Rrepresents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of Rs are identical or different. 

Composition for forming resist underlayer film, and pattern-forming method

A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Arand Areach independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask. 

Method for forming pattern, and composition for forming resist underlayer film

A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *&#x2014;COO&#x2014; or &#x2014;NR&#x2014;. Rrepresents a hydrogen atom or a Cmonovalent hydrocarbon group. Rrepresents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a Cmonovalent hydrocarbon group, a Cmonovalent oxyhydrocarbon group or a Cmonovalent sulfanilhydrocarbon group. p is an integer of 1 to 3. 

Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method

A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.

Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition

A chemical mechanical polishing aqueous dispersion includes (A) a graft polymer that includes an anionic functional group in a trunk polymer, and (B) abrasive grains.

Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method

A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.

Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device

A chemical mechanical polishing aqueous dispersion includes: (A) an amino acid, (B) abrasive grains, (C) a surfactant, (D) an oxidizing agent, and (E) ammonia, the ratio (W/W) of the content (W) of the amino acid to the content (W) of the oxidizing agent being 1.5 to 6.0, and the ratio (W/W) of the content (W) of the ammonia to the content (W) of the oxidizing agent being 0.05 to 0.6.

Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and chemical mechanical polishing aqueous dispersion preparation kit

A chemical mechanical polishing pad used for chemical mechanical polishing comprises a polishing surface, a non-polishing surface that is provided opposite to the polishing surface, a side surface that connects an outer edge of the polishing surface and an outer edge of the non-polishing surface, and a plurality of grooves formed in the polishing surface. The side surface has a slope surface that is connected to the polishing surface, and a depth of the grooves is equal to or smaller than a height of the slope surface.

Chemical mechanical polishing pad

The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000 Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.

Process for chemical mechanical polishing of semiconductor substrate and aqueous dispersion for chemical mechanical polishing

It is an object of the invention to provide an aqueous dispersion for CMP that produces no scratches on polishing surfaces and that polishes with an adequate rate, when used for polishing of copper and the like. The aqueous dispersion of the invention contains water and polymer particles composed of a polymer with a specific functional group, and it may also contain a complexing agent, a compound that forms a passivation film on polishing surfaces and/or an oxidizing agent. The specific functional group is a functional group that can react with the metals of polishing surfaces or that can form a cation, and it is preferably selected from among amino, pyridyl and acrylamide groups. The polymer can be obtained using a initiator and/or monomer possessing the specific functional group. The polymer may also have a crosslinked structure.

Method of chemical mechanical polishing

The invention provides an aqueous dispersion for chemical mechanical polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (silsesquioxane, fluorine-containing SiO, polyimide-based resins, and the like.). When using the aqueous dispersion for chemical mechanical polishing of an interlayer insulating film with an elastic modulus of no greater than 20 GPa as measured by the nanoindentation method, the number of scratches with a maximum length of 1 &#x3bc;m or greater is an average of no more than 5 per unit area of 0.01 mmof the polishing surface. An aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine, salicylaldoxime, o-phenylenediamine, catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like. The abrasive may consist of inorganic particles, organic particles or organic/inorganic composite particles. The organic/inorganic composite particles may be formed by polycondensation of an alkoxysilane, aluminum alkoxide, titanium alkoxide, and the like in the presence of polymer particles of polystyrene or the like, and bonding of polysiloxane, and the like, on at least the surface of the polymer particles.

Aqueous dispersion for chemical mechanical polishing

An object of the present invention is to provide a window member for chemical mechanical polishing, which is excellent in antifouling property and transparency and is excellent in anti-scratching and, further, can easily perform detection of a polishing endpoint of the surface of a semiconductor wafer by passing a light for endpoint detection, in polishing of a semiconductor wafer using an optical endpoint detecting apparatus and also to a polishing pad. A window member for chemical mechanical polishing of the present invention is provided with a substrate part (comprised of polyurethane resin and the like), which is transparent partly at least, an antifouling resin layer formed on at least one side of the substrate part. This antifouling resin layer is preferably comprised of a fluorine-based polymer having a polysiloxane segment in a main chain. A polishing pad may be the one that a window member is fitted in a through hole of a substrate for a polishing pad (comprised of polyurethane resin and the like, disc-like, belt-like or the like) provided with a through hole penetrating from surface to back, or adhered to a substrate for a polishing pad so as to cover an opening part of the through hole.

Window member for chemical mechanical polishing and polishing pad

The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.

Aqueous dispersion for chemical mechanical polishing used for polishing of copper

There are provided aqueous dispersions for CMP that can efficiently polish both copper films and barrier metal films, which can give sufficient flattened finished surfaces without excessive polishing of insulating films, as well as a CMP process employing the aqueous dispersions. The aqueous dispersions for CMP according to the invention are characterized in that for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (R /R ) of the copper film (R ) and the barrier metal film (R ) is such that 0.5&lE;R /R &lE;2, and the polishing rate ratio (R /R ) of the copper film (R ) and the insulating film (R ) is such that 0.5&lE;R /R &lE;2. Other aqueous dispersions for CMP according to the invention are characterized in that they contain an abrasive, a heterocyclic compound, an organic acid and an oxidizing agent, and for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (R /R ) of the copper film (R ) and the barrier metal film (R ) is such that 0<R /R &lE;5, and the polishing rate ratio (R /R ) of the insulating film (R ) and the barrier metal film (R ) is such that 0<R /R &lE;2. The CMP process of the invention is characterized by using these aqueous dispersions for CMP in the second stage of two-stage polishing, in the second stage of three-stage polishing or in the third stage of three-stage polishing.

Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process

Growing community of inventors

Tokyo, Japan

Masayuki Motonari