Micron Technology Incorporated

Texas Instruments Corporation

Masayoshi Nomura

Yutaka Ito

Keiichiro Abe

Yoshinori Fujiwara

Masashi Hashimoto

Duy-Loan T Le

Scott E Smith

Michael C Stephens, Jr

Kenya Adachi

Sasaki Kenji

Some embodiments include a voltage generator to generate a voltage to apply to a line used to access a memory cell of a memory device in which the voltage is applied to the line when the memory cell is not being accessed, and a power controller to cause the voltage to change between refresh operations of the memory device. Other embodiments including additional apparatus, systems, and methods are described.

Power saving memory apparatus, systems, and methods

A memory device includes a command decoder and control interface logic. One or more external inputs, such as row and column address strobes, communicate with the command decoder through the control interface logic. A control signal is also in communication with the control interface logic. During operation of a drowsy mode in the memory device, a self-refresh signal causes the control signal to disable the external inputs. With the external inputs disabled, command hazards are reduced when exiting drowsy mode.

Control of inputs to a memory device

Apparatus and methods provide built-in testing enhancements in integrated circuits. These testing enhancements permit, for example, continuity testing to pads and/or leakage current testing for more than one pad. The disclosed techniques may permit more thorough testing of integrated circuits at the die level, thereby reducing the number of defective devices that are further processed, saving both time and money. In one embodiment, a test signal is routed in real time through a built-in path that includes an input buffer for a pad under test. This permits testing of continuity between the pad and the input buffer. An output buffer can also be tested as applicable. In another embodiment, two or more pads of a die are electronically coupled together such that leakage current testing applied by a probe connected to one pad can be used to test another pad.

Methods for defect testing of externally accessible integrated circuit interconnects

Some embodiments include a voltage generator to generate a voltage to apply to a line used to access a memory cell of a memory device in which the voltage is applied to the line when the memory cell is not being accessed, and a power controller to cause the voltage to change during a time interval after a refresh operation of the memory device. Other embodiments including additional apparatus, systems, and methods are disclosed.

An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.

Growing community of inventors

Ryugasaki, Japan

Masayoshi Nomura