Nissin Ion Equipment Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Nissin Electric Co., Ltd.

Nisshin Denki Kaushiki Kaisha

Masayasu Tanjo

Shigeo Sasaki

Koji Okamoto

Kazuhiro Shono

Tetsuya Nakanishi

Eiji Kamijo

Kazuhiko Noguchi

Naomitsu Fujishita

Susumu Katoh

Masao Naitou

A repeller structure comprises a target member configured to be sputtered by a plasma to emit given ions, and provided with a through-hole penetrating between a sputterable surface and a reverse surface thereof, and a repeller body which supports the target member while being inserted in the through-hole of the target member, and has a repeller surface exposed on the side of the sputterable surface through the through-hole. The target member is made of a material selected from the group consisting of gallium oxide, gallium nitride, gallium phosphide, gallium arsenide and gallium fluoride.

Ion source and repeller structure

Provided is a method of controlling an ion implantation apparatuswhich includes: a mass separatorfor sorting out and outputting ions having a specific mass number and valence from an ion beam IB extracted from an ion source; an acceleration tubefor accelerating or decelerating the ion beam IB output from the mass separator; and an energy separatorfor sorting out and outputting ions having a specific energy from the ion beam IB output from the acceleration tube. The method comprises, during an acceleration mode, controlling an acceleration voltage Vsuch that it is prevented from becoming 0 kV.

Method of controlling ion implantation apparatus

An ion implantation apparatus includes an ion source having an arc chamber generating ions and a drawing electrode drawing ions from the arc chamber, a mass separator transporting only ions desired for implantation, an ion implantation chamber in which the material to be implanted by ions is placed, and a controller means for automatically controlling the distance between the arc chamber and the drawing electrode incrementally in accordance with a theoretical calculation using normalized perveance considering the kind of ions to be implanted, the accelerating voltage, and the ion current and current density distribution.

Ion implantation apparatus

A method of forming a diamond film on a substrate wherein hydrogen, a hydrocarbon series gas, an inert gas, an organic compound series gas or a mixture of such gases is introduced into a vacuum vessel to contact a substrate and carbon is evaporated by are discharge at a carbon cathode while applying a voltage to the substrate to deposit carbon on the substrate thus forming a diamond film on the substrate. A silicon series gas, a germanium series gas or a mixture thereof may be also introduced into the vessel with the foregoing gas or gases. While the carbon is being deposited on the substrate, thermoelectrons may also be supplied onto the substrate, and, further, high frequency discharge may be generated in a space between the substrate and the cathodes.

Method of forming a diamond film

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Kyoto, Japan

Masayasu Tanjo