Matsushita Electric Industrial Co., Ltd.

Masaya Manno

Minoru Kubo

Yuzaburo Ban

Akio Yoshikawa

Toshiya Fukuhisa

Mototsugu Ogura

Mototsugu Morisaki

A semiconductor laser, including: an n-type cladding layer that has n-type conductivity; an active layer formed on top of the n-type cladding layer; a p-type cladding base layer that is formed on top of the active layer and has p-type conductivity; a current-blocking layer that is formed on specified parts of an upper surface of the p-type cladding base layer and substantially has n-type conductivity; and a p-type buried cladding layer that has p-type conductivity and is formed so as to cover the current-blocking layer and contact remaining parts of the upper surface of the p-type cladding base layer. The current-blocking layer has at least two regions having different concentrations (hereafter &ldquo;N1&rdquo; and &ldquo;N2&rdquo; where N1<N2) of n-type carriers, a region adjacent to an interface between the p-type cladding base layer and the p-type buried cladding layer having the N1 concentration of n-type carriers and a part or, all of a remaining region of the current-blocking layer region having the N2 concentration.

Semiconductor laser and a manufacturing method for the same

Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.

Method of laser enhanced vapor phase growth for compound semiconductor

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Nara, Japan

Masaya Manno