Kobelco Research Institute, Inc.

Kobe Steel, Ltd.

Hyogo Prefecture

Masaya Ehira

Katsutoshi Takagi

Hiroshi Goto

Yuki Iwasaki

Yoichiro Yoneda

Toshihiro Kugimiya

Nobuyuki Kawakami

Mototaka Ochi

Hiroshi Gotou

Hitoshi Matsuzaki

Akira Nambu

Akira Nanbu

Shigeo Kashiwai

Masafumi Fukuzumi

The present invention provides a Cu&#x2014;In&#x2014;Ga&#x2014;Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu&#x2014;In&#x2014;Ga&#x2014;Se compound and/or a Cu&#x2014;In&#x2014;Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In&#x2014;Se compound in an amount of 20 mass % or less and/or a Cu&#x2014;In compound in an amount of 20 mass % or less.

Powder, sintered body and sputtering target, each containing elements of Cu, In, Ga and Se, and method for producing the powder

The invention relates to an Al&#x2014;Ni&#x2014;La system Al-based alloy sputtering target where a total area of an Al&#x2014;Ni system intermetallic compound having an average particle diameter of 0.3 &#x3bc;m to 3 &#x3bc;m with respect to a total area of the entire Al&#x2014;Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al&#x2014;La system intermetallic compound having an average particle diameter of 0.2 &#x3bc;m to 2 &#x3bc;m with respect to a total area of the entire Al&#x2014;La system intermetallic compound is 70% or more in terms of an area fraction.

Al-Ni-La system Al-based alloy sputtering target

This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a ZnSnOphase as the main phase and contains an In/InO&#x2014;ZnSnOsolid solution wherein In and/or InOis solid-solved in ZnSnO, but a ZnInOphase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

Oxide sintered compact and sputtering target

The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al&#x2014;Ni&#x2014;La&#x2014;Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al&#x2014;Ni&#x2014;La&#x2014;Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al&#x2014;Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 &#x3bc;m or more and 3 &#x3bc;m or less is 70% or more by area ratio based on an entire area of the Al&#x2014;Ni intermetallic compound, and (2) a total area of an Al&#x2014;La&#x2014;Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 &#x3bc;m or more and 2 &#x3bc;m or less is 70% or more by area ratio based on an entire area of the Al&#x2014;La&#x2014;Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from &#xbc;t (t: thickness) to &#xbe;t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.

AL-Ni-La-Cu alloy sputtering target and manufacturing method thereof

The present invention relates to an Al&#x2014;Ni&#x2014;La&#x2014;Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (&#xbc;)t to (&#xbe;)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al&#x2014;Ni system intermetallic compound having an average particle diameter of 0.3 &#x3bc;m to 3 &#x3bc;m with respect to a total area of the entire Al&#x2014;Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al&#x2014;Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al&#x2014;Ni&#x2014;La&#x2014;Si system intermetallic compound having an average particle diameter of 0.2 &#x3bc;m to 2 &#x3bc;m with respect to a total area of the entire Al&#x2014;Ni&#x2014;La&#x2014;Si system intermetallic compound is 70% or more in terms of an area fraction, the Al&#x2014;Ni&#x2014;La&#x2014;Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

Al-Ni-La-Si system Al-based alloy sputtering target and process for producing the same

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Hyogo, Japan

Masaya Ehira