Disco Corporation

Disco Corportion

Masatoshi Wakahara

Kentaro Odanaka

Heidi Lan

Wakana Onoe

Meiyu Piao

Masaru Nakamura

Karl Heinz Priewasser

Frank Wei

Motoko Nakayama

Yuki Nakamura

Meiya Piao

A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets and to define chip regions surrounded by the grooves; immersing the wafer in water, to which ultrasonic vibrations are being applied, after the etching step, whereby the device layer is cracked or ruptured along outer peripheral edges of the chip regions; and bonding a tape to a front side of the wafer before performance of the water immersion step.

Wafer processing method

A wafer processing method for processing a wafer having a substrate and a device layer formed on a front side of the substrate includes forming a mask on a back side of the wafer, so as to form an etched groove along each street through a thickness of the substrate from the back side of the wafer, performing plasma etching from the back side of the wafer through the mask to the substrate after forming the mask, thereby forming the etched groove in the substrate along each street so that the etched groove has a depth equal to the thickness of the substrate, and applying a laser beam to the device layer along each street from the front side of the wafer before etching and mask forming, thereby forming a device layer dividing groove corresponding to the etched groove along each street.

A semiconductor wafer processing method includes a step of forming a laser processed groove on the front side of a semiconductor wafer along each division line, a step of forming a mask layer on a protective layer except in an area above a metal electrode formed in each device on the front side of the wafer, a first etching step of etching the protective layer by using the mask layer to expose each metal electrode, a second etching step of etching the inner surface of each laser processed groove by using the mask layer used in the first etching step, thereby expanding each laser processed groove, and a dividing step of dividing the wafer along each laser processed groove expanded in the second etching step.

Semiconductor wafer processing method

A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets; ejecting high-pressure fluid against the back side of the wafer with the wafer mounted at its front side on a mounting surface to press the wafer at regions surrounded by the etched grooves; and bonding a tape to the front side of the wafer before performance of at least the pressing step.

In a semiconductor device manufacturing method in which a wafer formed with devices in a plurality of areas sectioned by a plurality of streets formed in a lattice-like pattern on the front surface is divided into the individual devices along the streets, when the wafer is divided into the individual devices by exposing cut grooves formed along the streets by a dicing before grinding process, a rigid plate is applied to the front surface of the wafer and an adhesive film is attached to the rear surface of the wafer. Thereafter, a separation groove forming step is performed in which a laser beam is directed to the adhesive film along the cut grooves from the dicing tape side applied with the wafer attached with the adhesive film to form separation grooves in the adhesive film along the cut grooves.

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Tokyo, Japan

Masatoshi Wakahara