Sumitomo Electric Device Innovations, Inc.

Sumitomo Electric Industries, Limited

Masatoshi Koyama

Tsutomu Komatani

Kazuaki Matsuura

A process of forming a nitride semiconductor device is disclosed. The process includes steps of (a) implanting impurities into a portion of nitride semiconductor layers epitaxially grown on a substrate; (b) forming a silicon nitride (SiN) film on the nitride semiconductor layers; and (c) annealing the nitride semiconductor layers for activating the implanted impurities as covering the nitride semiconductor layers by the SiN film. The process has a feature that the SiN film shows, in a Fourier Transformation Infrared (FT-IR) spectroscopy measured before the step of annealing, absorbance peaks attributed to translational motions of a Si&#x2014;H bond and an N&#x2014;H bond at most 1/30 of an absorbance peak attributed to a SiN bond.

Process of forming nitride semiconductor device

A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region, which crosses the inactive region to electrically connect the first active region to the second active region, in a semiconductor layer; forming an insulating layer on the semiconductor layer; and forming an opening selectively in the insulating layer by dry etching.

Method for manufacturing semiconductor device

A method for fabricating a semiconductor device includes forming a recess to an AlGaN layer by etching, the AlGaN layer having an Al composition ratio of 0.2 or greater, the recess having a bottom having an RMS roughness less than 0.3 nm, forming a first Ta layer having a thickness of 4 nm to 8 nm on the bottom of the recess, and annealing the first Ta layer to make an ohmic contact in the AlGaN layer.

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Yokohama, Japan

Masatoshi Koyama