Mitsubishi Gas Chemical Company, Inc.

Kansai University

Masatoshi Echigo

Takashi Makinoshima

Takashi Sato

Takumi Toida

Dai Oguro

Hisayuki Kuwahara

Takeshi Koyama

Naoya Uchiyama

Go Higashihara

Masako Yamakawa

Youko Shimizu

Hiromi Hayashi

Kana Okada

Junya Horiuchi

Yu Okada

Masaaki Takasuka

Tetsushi Ichikawa

Atsushi Okoshi

Yumi Ochiai

Shun Ogawa

Tsutomu Numoto

Hiroto Kudo

A compound represented by the following formula (1). The compound can be used as a film forming material for lithography or an optical component forming material. A resin may also be obtained using this compound as a monomer, a composition, a method for forming a resist pattern, a method for forming an insulating film, a method for forming a circuit pattern, and a method for purifying the above compound or resin.

Compound, resin, composition, resist pattern formation method, circuit pattern formation method and method for purifying resin

A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin are provided. The compounds and materials can provide for high solubility in a safe solvent.

Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin

An object of the present invention is to provide a new compound that is useful as a film forming material for lithography and the like. The above object can be achieved by a compound represented by the following formula (1).

The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: 

Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method

The present invention is a compound represented by the following general formula (1). 

Resist composition, method for forming resist pattern, and polyphenol compound used therein

The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.

Compound, resist composition, and method for forming resist pattern using it

The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein Rrepresents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each Rindependently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one Rrepresents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each mis independently an integer of 0 to 7, provided that at least one mis an integer of 1 to 7, and each q is independently 0 or 1.

Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method

The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein Rrepresents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each Rindependently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least one mis an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of Rand Ris a group having an iodine atom.

Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method

The present invention employs a compound represented by the following formula (0): 

Compound, resin, composition, resist pattern formation method, and circuit pattern formation method

A compound represented by the following formula (1) and a method for producing the same, and a composition, a composition for optical component formation, a film forming composition for lithography, a resist composition, a method for forming a resist pattern, a radiation-sensitive composition, a method for producing an amorphous film, an underlayer film forming material for lithography, a composition for underlayer film formation for lithography, a method for producing an underlayer film for lithography, a resist pattern formation method, a circuit pattern formation method, and a purification method.   

Compound, composition, and method for producing same, underlayer film forming material for lithography, composition for underlayer film formation for lithography, and purification method

The present invention provides a compound represented by following formula (1), wherein Rrepresents a 2n-valent group having 1 to 30 carbon atoms, each of Rto Rindependently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from Rto Rrepresents a group including an iodine atom and at least one Rand/or at least one Rrepresent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of mand mindependently represents an integer of 0 to 8, each of mand mindependently represents an integer of 0 to 9, provided that mand mdo not represent 0 at the same time, n represents an integer of 1 to 4, and each of pto pindependently represents an integer of 0 to 2.

Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method

A compound represented by the following formula (1): 

Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method

A (meth)acryloyl compound represented by the following formula (A): 

(Meth)acryloyl compound and method for producing same

The present invention provides a resist base material containing a compound having a specific structure and/or a resin derived from the compound as a monomer.

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Kanagawa, Japan

Masatoshi Echigo