Tokyo Electron Limited

Tokyo Electron Kyushu Limited

Intel Corporation

Masatoshi Deguchi

Akihiro Fujimoto

Masatoshi Shiraishi

Shinji Okada

Yuji Matsuyama

Hiroichi Inada

Eiichi Sekimoto

Keizo Hasebe

Shinzi Kitamura

Hiroyuki Iino

Mitsuhiro Nambu

Kosuke Yoshihara

Koichi Asaka

Kousuke Yoshihara

Takahiro Kitano

Naruaki Iida

Junichi Kitano

Xavier Francois Brun

Masami Yamashita

Satoru Shimura

Takashi Takekuma

Hidefumi Matsui

Toshichika Takei

Takayuki Katano

Ikuo Sunaka

Daisuke Ishimaru

Masaaki Murakami

Hideo Funakoshi

Hiroyuki Iwaki

Charles Wayne Singleton, Jr

Kabirkumar Mirpuri

Norifumi Sato

Shigenori Kamei

Yo Suzuki

Toru Aoyama

Wataru Kiyota

Shinichi Machidori

A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.

Separation method, computer storage medium, and separation system

This joining method of joining a target substrate and a support substrate includes: an adhesive coating operation that includes coating the target substrate or the support substrate with an adhesive; an adhesive removing operation that includes supplying a solvent for removing the adhesive onto an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive in the adhesive coating operation, to thereby remove the adhesive on the outer peripheral portion; and a joining operation that includes pressing and joining the target substrate and the support substrate together, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the support substrate coated with no adhesive, or pressing and joining the support substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the target substrate coated with no adhesive.

Joining method and joining system

The present disclosure is a joining method that joins a target substrate and a support substrate, wherein the method has: a joining operation that includes pressing and joining the target substrate and the support substrate by interposing an adhesive therebetween; and an adhesive removing operation that includes supplying a solvent of the adhesive to the outer adhesive that is the adhesive between the target substrate and the support substrate protruding in the joining operation from the outer lateral surface of the stacked substrate made by joining the target substrate and the support substrate, and to remove the surface of the outer adhesive so that the outer adhesive is formed at a predetermined size.

When joining a processing target substrate and a supporting substrate together by suction-holding the processing substrate and the supporting substrate respectively on a first holding unit and a second holding unit arranged to face each other and pressing the second holding unit toward the first holding unit while heating the substrates by heating mechanisms of the holding units, the present invention preheats at least the processing target substrate before suction-holding the processing target substrate on the first holding unit to suppress generation of particles when joining the processing target substrate and the supporting substrate together so as to properly perform the joining of the processing target substrate and the supporting substrate.

Joint method, joint apparatus and joint system

Disclosed is a bonding system which efficiently performs a bonding of a substrate to a support substrate, thereby improving the throughput in a bonding processing. The disclosed bonding system includes a loading/unloading station and a processing station. The processing station includes: an adhesive applying device configured to apply an adhesive to the wafer; a protective agent applying device configured to apply a protective agent to the wafer, a remover applying device configured to apply a remover to the support wafer, a heat processing device configured to heat the wafer or the support wafer which is applied with at least the adhesive, the protective agent or the remover, at a predetermined temperature, a bonding device configured to bond the wafer to the support wafer through the adhesive, the protective agent and the remover, and a wafer transfer area configured to transfer the wafer, the support wafer or the bonded wafer.

Bonding system and bonding method

A substrate treatment system includes a plurality of treatment apparatuses, a position adjustment apparatus adjusting a center position of the substrate, a substrate transfer apparatus transferring the substrate to the treatment apparatuses and the position adjustment apparatus, and a control unit controlling operations of the apparatuses. The substrate transfer apparatus includes an arm part curved along a peripheral edge portion of the substrate with a radius of curvature larger than a radius of the substrate, and a holding part projecting inward from the arm part and holding a rear surface of the substrate. The position adjustment apparatus includes a mounting table which holds a central portion of the rear surface of the substrate and is rotatable and horizontally movable. The control unit controls the mounting table such that the center position of the substrate held on the mounting table is aligned with a center position of the arm part.

Substrate treatment system, substrate treatment method, and non-transitory computer storage medium

The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature. By temporarily increasing the temperature of the substrate to the intermediate temperature lower than the reaction temperature, maintaining the substrate at this intermediate temperature for the predetermined period of time, and thereafter increasing the temperature of the substrate to the high temperature higher than the reaction temperature when the temperature of the substrate is increased, the temperature within the surface of the substrate can be made uniform when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.

Method and apparatus for heat processing of substrate

On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

Substrate processing apparatus and substrate processing method

The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.

Method for heat processing of substrate

A process solution applying apparatus comprising a substrate holding mechanism for holding a substrate, a process solution supplying system for applying process solution in a prescribed amount to the substrate held by the substrate holding mechanism, the process solution supplying system having a supplying mechanism for changing a rate at which the process solution is supplied, and a substrate rotating mechanism for rotating the substrate holding mechanism, thus rotating the substrate at a predetermined speed to spread the process solution by virtue of centrifugal force and to coat the substrate with the process solution.

Apparatus and method for applying process solution

The present invention is a substrate processing apparatus for performing processing of a substrate including: a heat treatment unit provided in a casing of the processing apparatus and having a heating section in which a heat treatment of the substrate is performed; a duct provided on a side part on the heating section side of the casing; and a cooling flow passage provided in the duct for allowing a cooling fluid to flow therethrough. Heat generated from the heating section is prevented from conducting by an air current flowing in the duct, and further the heat is absorbed by the cooling fluid. Therefore, it is possible to prevent the heat from conducting to the outside of the casing.

Substrate processing apparatus

A substrate processing apparatus has a film forming unit group disposed along a first transfer route and a developing processing unit group disposed along a second transfer route. A substrate is transferred along the first transfer route, undergoes film forming processing in the film forming unit group, and thereafter undergoes exposure processing. After undergoing exposure processing, the substrate is transferred along the second transfer route and undergoes developing processing in the developing unit group. The unit groups in which different sorts of processing are performed are disposed along the different transfer routes as described above, thereby enabling the substrate to be transferred efficiently.

A substrate processing apparatus for performing processing having a plurality of processes, for example, resist coating and developing processing for a substrate, comprises a plurality of processing mechanisms each for performing predetermined processing for the substrate in correspondence with the plurality of processes and a transfer section for transferring the substrate. The transfer section includes a plurality of transfer mechanisms for carrying the substrate into or out of the plurality of processing mechanisms and a buffer mechanism provided at a position to which each of the plurality of transfer mechanisms is accessible and having a standby section for allowing the substrate to stand by thereon temporarily, and the plurality of processing mechanisms are provided around the transfer section.

An apparatus for forming a coating film, comprises a spin chuck for supporting a substrate with one surface facing upward and rotating the substrate about a vertical axis, a first nozzle for supplying a solvent of a coating solution on the substrate, and a second nozzle for supplying the coating solution on a central portion of the substrate. The first and second nozzles are supported by a head such that the supported nozzle moves between a dropping position above the substrate and a waiting position offset from the substrate. The solvent and coating solution are diffused along the surface of the substrate by rotating the spin chuck.

Growing community of inventors

Kumamoto, Japan

Masatoshi Deguchi