Kabushiki Kaisha Toshiba

Masato Saito

Takashi Sato

Masamitsu Itoh

Ryoichi Inanami

Hideaki Sakurai

Koichi Kokubun

Akiko Mimotogi

Yongfang Li

Tooru Shibata

According to one embodiment, a pattern transfer mold includes a base body, first and second stacked bodies, first and second electrodes. The base body includes a base unit including a first surface, a first protrusion provided on the first surface and having a first side surface, and a second protrusion provided on the first surface, separated from the first protrusion, and having a second side surface opposing the first side surface. The first stacked body is provided on the first side surface, and includes first conductive layers and a first insulating layer. The second stacked body is provided on the second side surface, separated from the first stacked body, and includes second conductive layers and a second insulating layer. The first electrode is electrically connected to at least one of the first conductive layers. The second electrode is electrically connected to at least one of the second conductive layers.

Pattern transfer mold and pattern formation method

According to one embodiment, there is provided a template forming method that transfers a pattern from a first template to a to-be-processed substrate and subjects the to-be-processed substrate to a processing process to form a second template by using an imprinting method, includes forming a first resist film on a pattern forming region on the to-be-processed substrate, selectively forming a second resist film on a mark forming region on the to-be-processed substrate, transferring a concavo-convex pattern formed on the first template to the first resist film, and processing the to-be-processed substrate with the first resist film to which the concavo-convex pattern is transferred and the second resist film used as a mask.

Template forming method

A position deviation and an image of a danger control pattern predicted after multiple exposure of each mask used for multiple exposure are acquired and an image after lap exposure by means of the masks based on the above image and position deviation information. At this time, parameters such as an offset amount caused by overlapping of images of the masks, rotation amount and the like are changed and a parameter capable of avoiding occurrence of faults in a dangerous pattern in an image predicted after lap exposure is calculated.

Manufacturing method of photomask for multiple exposure and semiconductor device manufacturing method using above photomask

A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (&#x2267;2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1&#x2266;i&#x2266;M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

Pattern forming method, photomask manufacturing method, semiconductor device manufacturing method, and computer program product

A pattern drawing system includes a beam irradiating mechanism which irradiates electrically charged beams on a film to be drawn, a coefficient calculating section which calculates a backward scattering coefficient relevant to a drawing pattern in the film to be drawn, based on an approximating function for approximating a relationship between a global coating rate of the drawing pattern and a backward scattering coefficient of the electrically charged beams in the film to be drawn, and based on the global coating rate of the drawing pattern, and an irradiation quantity calculating section which calculates an electrically charged beam irradiation quantity used for drawing the pattern using an electrically charged beams irradiating mechanism, based on the backward scattering coefficient of the pattern.

Pattern drawing system, electrically charged beam drawing method, photomask manufacturing method, and semiconductor device manufacturing method

A photomask evaluation method includes applying energy waves to a photomask having a to-be-measured pattern, detecting a response wave from the photomask, acquiring an edge profile of the to-be-measured pattern based on the response wave, acquiring dimension of that portion of the to-be-measured pattern which lies in a preset area, based on the edge profile, subjecting that portion of the edge profile which lies in the preset area to frequency analysis to acquire intensity distribution of frequency components, and extracting a portion with a frequency lower than a preset frequency from the intensity distribution.

Photomask evaluation method and manufacturing method of semiconductor device

A charged beam writing apparatus is disclosed, which comprises a shaped beam forming unit which shapes a charged beam radiated from a charged beam source into a beam of a desired shape by using at least two shaping masks each having a shaping aperture to form a shaped beam, a figure dividing unit which divides a contour portion of a pattern to be formed on an object layer into a plurality of figure portions having a predetermined area, a writing unit which writes the figure portions of the contour portion by using a shaped beam of the predetermined area, and a focus control unit which performs focusing of the beam radiated from the charged beam source, by using a shaped beam having the same area as that of the shaped beam which has the predetermined area and is used in writing of the figure portions of the contour portion.

Growing community of inventors

Machida, Japan

Masato Saito