Fuji Electric Co., Ltd.

Director-general, Jiro Hiraishi, Agency of Industrial Science and

Masato Nishizawa

Shinichi Hashimoto

Kazuo Matsuzaki

Junji Itoh

Yoshiyuki Sakai

Yuichi Urano

Naoki Ito

Yoichi Ryokai

Takahiko Uematsu

Yoshiyuki Sugahara

A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.

Semiconductor device manufacturing method

In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.

Field emission type electron emitting device and method of producing the

Field emission type electron emitting device with convex insulating

A method for separating a joined substrate type wafer, which wafer is composed of a pair of semiconductor substrates joined through an insulation film, utilizes dielectrics through simple processing steps. Trenches for separating a semiconductor substrate with dielectrics are dug from the surface of the substrate and a dielectrics film is deposited on the surface of the substrate including the trenches. Then poly-crystalline silicon is grown by CVD to a thickness of about 0.5 .mu.m, which is deep enough to fill the trenches. The process time for growing poly-crystalline silicon is shortened, and the processing step for removing the poly-crystalline silicon deposited on the unwanted areas is eliminated by growing the poly-crystalline silicon in the trenches but not on the crystalline surface of semiconductor regions based on the growth rate dependence of the poly-crystalline silicon on the crystallinity of the surface on which the poly-crystalline silicon is grown.

Method of separating a semiconductor wafer with dielectrics

Growing community of inventors

Nagano, Japan

Masato Nishizawa