Tokyo Electron Limited

Masato Koizumi

Kimihiro Matsuse

Tsuyoshi Takahashi

Kazuya Okubo

Tsuyoshi Hashimoto

Seishi Murakami

Sumi Tanaka

Hiroaki Ashizawa

Hirokatsu Kobayashi

Masaki Koizumi

Tetsuya Nakano

Nobutaka Nakajima

A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptorin a chamberto a predetermined temperature. After this, the interior of the chambercontaining no wafers W is cleaned by discharging Clgas as a cleaning gas from a shower headinto the chamber. During this cleaning, the temperature of each of the susceptor, the shower head, and the wall portion of the chamberis independently controlled so that the temperature of the susceptoris not lower than the decomposition start temperature of Clgas and the temperature of the shower headand the wall portion of the chamberis not higher than the decomposition start temperature.

Film formation method, cleaning method and film formation apparatus

Disclosed is a film forming method using a film forming gas composed of a metal alkoxide wherein clean film formation suppressed in contamination of a target substrate to be processed is achieved by restraining aluminum or an aluminum alloy in the processing chamber from dissolving. Specifically disclosed is method for forming a thin film on a target substrate to be processed which is held in a processing chamber, and this method comprises a step for heating the target substrate and a step for supplying a film forming gas into the processing chamber. This method is characterized in that the film forming gas is composed of a metal alkoxide, the processing chamber is made of aluminum or an aluminum alloy, and a protective film composed of a nonporous anodic oxide film is formed on the inner wall surface of the processing chamber.

Film forming apparatus, film forming method, program and storage medium

A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film on the poly-crystal silicon layer; and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon

A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

Laminated structure and a method of forming the same

A susceptor according to the present invention is set in a process chamber for subjecting an object to a specific process and can bear the object thereon. The susceptor includes a stepped section for defining a recessed bearing region capable of bearing the object therein and positioning the object on the susceptor, and at least one groove formed in the bearing region and used to allow a gas remaining in a gap between the object and that part of the susceptor which includes the stepped section to get out of the bearing region.

Growing community of inventors

Yamanashi-ken, Japan

Masato Koizumi