Samsung Electronics Co., Ltd.

Masato Horiguchi

Yong Woo Lee

Doug Yong Sung

Seung Bo Shim

Young Jin Noh

Cheon Lee

Peter Byung H Han

Ji Soo Im

Hyeong Mo Kang

Jongwoo Sun

Yongwoo Lee

Dowon Kim

Kyohyeok Kim

Youngjin Noh

Akira Koshiishi

Yunhwan Kim

Taeil Cho

Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

Plasma processing equipment

A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.

Plasma processing apparatus and method of manufacturing semiconductor device using the same

Growing community of inventors

Suwon-si, South Korea

Masato Horiguchi