Hitachi, Ltd.

Other

Renesas Technology Corp.

Hitachi Electronics Engineering Co., Ltd.

Masataka Shiba

Yoshitada Oshida

Minori Noguchi

Yukio Kenbo

Makoto Murayama

Yasuhiro Yoshitaka

Yasuhiro Yoshitake

Toshihiko Nakata

Akira Inagaki

Naoto Nakashima

Sachio Uto

Kenchi Ito

Kenji Watanabe

Kazumi Kawamoto

Yasuo Hira

Seiji Ishikawa

Atsushi Shimoda

Toshimitsu Hamada

Hidemi Sato

Ryuichi Funatsu

Yasuhiko Nakayama

Yoshiharu Shigyo

Atsuko Fukushima

Minoru Yoshida

Mari Nozoe

Fumio Mizuno

Mitsuyoshi Koizumi

Susumu Komoriya

Seiji Isogai

Ikuo Suzuki

Isao Miyazaki

Jun Nakazato

Yuichi Ohyama

Masami Ikota

Makoto Ariga

Tetsuji Yokouchi

Terushige Asakawa

Hidekuni Sugimoto

Shunji Maeda

Hidetoshi Nishiyama

Akira Arimoto

Takahiro Jingu

Yoshimasa Ohshima

Kenji Oka

Tetsuya Watanabe

Yukio Kembo

Naoya Kanda

Koji Suzuki

Tsutomu Tanaka

Hiroshi Morioka

Yuzo Taniguchi

Hideaki Doi

Kazuhiko Matsuoka

Motoya Taniguchi

Atsuhiro Yoshizaki

Hiroyasu Funakubo

Fumiaki Endo

Yoshihiko Aiba

Toshiaki Yachi

Naoki Go

A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing the light pattern is formed by illuminating a mask with excimer laser light having an annular shape.

Exposure apparatus and method

A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device through an object lens, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing, the light pattern projected on the substrate is formed by excimer laser light which is emitted from an annular shaped light source and which is passed through a mask having a phase shifter.

A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a first light pattern on the substrate of the semiconductor device the first light pattern being formed by passing light through a first mask, and exposing the resist by projecting a second light pattern on the substrate, the second light pattern being formed by passing light through a second mask. In the step of exposing the resist by projecting the second light pattern, the second light pattern is formed by excimer laser light having an annular shape and passed through the second mask.

An apparatus and method for projecting a pattern includes a light source for emitting a laser; an illuminating unit which illuminates a mask on which a pattern is formed with the laser emitted from the light source and formed in a particular shape; a holder which holds the mask; an optical lens unit which projects the pattern formed on the mask onto a surface of a substrate by the laser illuminated on the mask; and a table which mounts the substrate and moves in at least one direction.

A process management system in accordance with the present invention includes inspection apparatuses for inspecting defects on a wafer, the inspection apparatuses being connected through a communication network, inspection information and image information obtained from these inspection apparatuses being collected to construct a data base and an image file, therein definition of defects is given by combinations of elements which characterize the defect based on the inspection information and the image information obtained from the inspection apparatuses. By giving definition of the defect, characteristics of the defect can be subdivided and known. Therefore, the cause of a defect can be studied.

Process management system

A semiconductor device producing method and a semiconductor device producing system employs a processing apparatus provided with a dust particle detecting apparatus. The dust particle detecting apparatus measures the condition of adhesion of dust particles adhering to a work at least before or after processing the work, manages the condition of incremental adhesion of dust particles to the work resulting from processing for each lot of works or for each work on the basis of the measured condition of adhesion of dust particles measured before or after processing the work, and determines the time when the processing apparatus is to be cleaned or the cycle of cleaning the processing apparatus on the basis of the managed condition of adhesion of dust particles.

Semiconductor device producing method, system for carrying out the same and semiconductor work processing apparatus included in the same system

A method of reviewing defects on a substrate. The method includes inputting information of defects on a substrate detected by a detection apparatus, identifying cluster of defects detected on the substrate by using the inputted information, selecting defects to be reviewed from the cluster identified, reviewing the selected defects, and classifying the reviewed defects.

Method of determining lethality of defects in circuit pattern inspection, method of selecting defects to be reviewed, and inspection system of circuit patterns involved with the methods

Process control system

A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter, exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask, and forming a pattern on the substrate in accordance with a portion of the resist exposed with the excimer laser.

The present invention is related to an inspection data processing method for processing inspection data composed of coordinates data and characteristic quantity data about a defect generated on a subject of inspection detected with a visual inspection apparatus. The inspection data processing method comprises the following steps: a preparation step of storing a first fatality judgment data group corresponding to the kinds of areas on the subject of inspection and a second fatality judgment data group corresponding to categories of defects beforehand; a first fatality judgment step of judging a first fatality level of a defect corresponding to the kind of an area where the defect exists; a category giving step of giving category to the defect in the inspection data; and a second fatality judgment step of judging a second fatality of the defect based on second fatality judgment data selected according to the category which are given based on the first fatality level of defects judged in the first fatality judgment step.

Method and apparatus for processing inspection data

A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, forming the excimer laser in a particular shape, illuminating a pattern on a mask for a phase shifter method with the particular shaped excimer laser, and exposing a resist on a wafer with the excimer laser which passed through the mask. The resist on the wafer is developed and the wafer is etched to form a pattern.

Method of determining lethality of defects in circuit pattern inspection method of selecting defects to be reviewed and inspection system of circuit patterns involved with the methods

An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.

Inspection apparatuses of an inspection apparatus group are connected to a network and transfer inspected result to a data collection system. The same wafer selected from a specific process is inspected by the different inspection apparatuses and the inspected data are collected and analyzed to calculate a correlation degree among the inspection apparatuses. On the other hand, the course of occurrence of failures in the same process can be analyzed to thereby calculate an average occurrence frequency of failures. An optimum inspection apparatus and inspection frequency are successively obtained on the basis of calculated results of an inter-apparatus correlation degree calculation process and a failure occurrence frequency calculation process, so that a feeding method of wafers to the inspection apparatus group is indicated through an inspection apparatus group management system. In the manufacturing of electronic components, complicated conditions such as the optimum inspection apparatus to be applied, the inspection frequency and the like can be set easily and the expected total loss value can be minimized to improve the economical efficiency of inspection remarkably.

System for quality control where inspection frequency of inspection

Growing community of inventors

Yokohama, Japan

Masataka Shiba