Kabushiki Kaisha Toshiba

Masataka Nanba

Hiroshi Sawano

Norihide Funato

Shigeru Tanabe

An ultrasonic bonding equipment for manufacturing a semiconductor device comprises a tip portion. The tip portion has a top surface which is faced to a member to be bonded, and propagates an ultrasonic vibration to the top surface. A plurality of protruding portions are provided on the top surface. Each of the protruding portions has: a first pair of opposite side surfaces inclined with respect to the top surface; and a second pair of opposite side surfaces substantially vertical to the top surface. A semiconductor device comprises: a semiconductor chip; a lead; and a bonding strap electrically connecting the semiconductor chip and the lead. A recess is formed on an upper surface of the bonding strap in at least one of a first region where the bonding strap and the semiconductor chip are connected and a second region where the bonding strap and the lead is connected. A first pair of opposite side surfaces of the recess are inclined with respect to the upper surface of the bonding strap, and a second pair of opposite side surfaces of the recess are substantially vertical to the upper surface of the bonding strap.

Ultrasonic bonding equipment for manufacturing semiconductor device, semiconductor device and its manufacturing method

A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.

Growing community of inventors

Shiso-gun, Japan

Masataka Nanba