Fujitsu Corporation

Nec Corporation

Sanyo Electric Co., Ltd.

Kabushiki Kaisha Toshiba

Fujitsu Microelectronics Limited

Sharp Corporation

Fijitsu Limited

Masataka Hoshino

Mitsuo Umemoto

Hiroshi Terao

Akira Suzuki

Yoshio Okayama

Koujiro Kameyama

Nobuhiro Misawa

Kenji Takahashi

Satoshi Otsuka

Hideo Takagi

Wataru Futo

Koji Endo

Shigetaka Uji

Tomotoshi Sato

Yukihiro Satoh

Kiyoshi Izumi

Yuzuru Ohta

A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Semiconductor device with via hole of uneven width

Semiconductor device and manufacturing method thereof

The opto-electronic integrated circuit device comprises an optical switchprovided in an input portof a first input/output portover a substrateand changing over an optical path of an optical signal inputted from the input portand outputting the optical signal through one of a plurality of output terminalsan opto-electric conversion elementoptically connected to one of the plural output terminals of the optical switchand converting the optical signal outputted from one of the output terminalsof the optical switchto an electric signal and inputting the converted electric signal in a semiconductor elementmounted over the substrateand an optical waveguideoptically connected to another of the plural output terminalof the optical switchand outputting the optical signal outputted from said another output terminalof the optical switchthrough an output portof a second input/output portover the substrate

Opto-electronic integrated circuit device, opto-electronic integrated circuit system and transmission method

A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.

Manufacturing method of semiconductor device

A semiconductor device, includes a semiconductor substrate having a first surface and a second surface opposite the first surface, and having a piercing hole piercing there-through from the first surface to the second surface, an insulating film formed on the first surface of the semiconductor substrate having the piercing hole extended there-through and a piercing electrode formed in the piercing hole and extending from the insulating surface to the second surface, wherein the piercing hole has a first diameter in the insulating film and a second diameter in the semiconductor substrate which is wider than the first diameter, the piercing electrode has a substantially same diameter as the first diameter along a whole length thereof, and an insulating film sleeve lies between the piercing electrode and an inside wall of the piercing hole in the semiconductor substrate.

Three dimensional semiconductor integrated circuit device having a piercing electrode

The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250&deg; C.-450&deg; C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.

Semiconductor device with copper wiring and its manufacture method

A process of growing a film of a metal on a substrate in a selective area thereof by chemical vapor deposition, the process comprising the steps of: preparing a source having a molecule comprising a metal and a radical; providing a substrate having a selective area made of a first substance which is unreactive with the radical and the other area made of copper which is reactive with the radical; and supplying the source onto the substrate held at a film growing temperature to induce a reaction on the substrate, such that, in the selective area, the molecule of the source is bonded to the first substance and decomposed to precipitate the metal on the first substance while, in the other area, the radical of the molecule is combined with the copper to cover the other area of the substrate with a coating which is unreactive with the molecule of the source.

Process of selective area chemical vapor deposition of metal films

A method of growing, in a vapor phase, a gold film having high electro-migration resistance and a flat surface, and capable of being buried in contact holes disposed in an insulating film of an integrated circuit device, for example, at a practical growing rate. Dimethylgold hexafluoroacetylacetonato (DMAu(hfac)), for example, is used as a starting gas, and vapor growth is carried out under specific conditions by utilizing thermal CVD. Adhesion of the gold film can be improved by converting it to a two-layered film by the combination of plasma enhanced CVD with thermal CVD.

Gold thin film vapor growing method

Growing community of inventors

Kawasaki, Japan

Masataka Hoshino