Spansion LLC.

Cypress Semiconductor Corporation

Masataka Hoshino

Koji Taya

Naomi Masuda

Ryota Fukuyama

Junichi Kasai

Masanori Onodera

Kouichi Meguro

Yasuhiro Shinma

Ryoto Fukuyama

Masahiko Harayama

A semiconductor device which includes a first semiconductor chip, a first electrodeformed on the first semiconductor chip, a second semiconductor chipto which the first semiconductor chipis mounted, a second electrodewith a protrusion, which is formed on the second semiconductor chip, and a solder bumpwhich bonds the first electrodeand the second electrodeto cover at least a part of a side surface of the protrusion, and a method for manufacturing thereof are provided.

Semiconductor device and method for manufacturing thereof

Methods and structures for stack type semiconductor packaging are disclosed. In one embodiment, a semiconductor device includes a semiconductor chip mounted onto a substrate, a first resin molding portion formed on the substrate for sealing the semiconductor chip, and a through metal mounted on the substrate so as to pierce the first resin molding portion around the semiconductor chip. The semiconductor device further comprises an upper metal electrically coupled with the through metal and mounted on the first resin molding portion to extend from the through metal toward the semiconductor chip along an upper surface of the first resin molding portion, where the through metal and the upper metal are formed into an integral structure.

Structures and methods for stack type semiconductor packaging

The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.

Semiconductor device and method of manufacturing the same

A method in accordance with an embodiment of the invention can include forming fan-out wirings on an insulating layer formed on a wafer. Additionally, electrodes of a plurality of semiconductor chips stacked on the fan-out wirings can be electrically coupled with the fan-out wirings. The wafer can be removed.

Manufacturing stacked semiconductor device

A semiconductor deviceincludes a semiconductor substrate, a connection electrodedisposed on an upper surface of the semiconductor substrateand connected to an integrated circuit thereon, a through electrodewhich penetrates the semiconductor substrateand the connection electrode, and an insulation portioninterposed between the semiconductor substrateand the through electrode. The through electrodeis integrally formed to protrude outward from upper surfaces of the semiconductor substrateand the connection electrode, and connected to the connection electrodein a region where the through electrodepenetrates the connection electrode

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Tokyo, Japan

Masataka Hoshino