Tokyo Electron Limited

Masataka Gosho

Satoshi Okamura

Tomohito Ura

Reijiro Yamanaka

Koji Tanaka

Yuichi Douki

Yuji Kimura

Akihiro Teramoto

Satoshi Biwa

Shogo Fukui

Yuichiro Kunugimoto

Yukiyoshi Saito

Keita Hirase

Shu Yamamoto

Katsuhiro Ookawa

Shinichi Ikeda

Shota Takei

Kazuaki Kitamura

Shunsuke Kurizaki

A substrate processing system includes: a carry-in/out section in which a cassette accommodating a plurality of substrates is carried in/out; a batch processing section in which a wafer lot including the plurality of substrates is collectively processed in a state where each of the plurality of substrates stand upright; a single-wafer processing section in which the plurality of substrates included in the wafer lot are processed one by one in a horizontal state; and an interface section that delivers the plurality of substrates from the batch processing section to the single-wafer processing section. The interface section includes: a standby table that horizontally holds a substrate in a state of being in contact with pure water; and a transfer mechanism that delivers the substrate from the batch processing section to the standby table.

Substrate processing system and substrate processing method

A substrate processing apparatus for drying a substrate by substituting a liquid film of a drying liquid formed on the substrate with a supercritical fluid incudes: a pressure container configured to accommodate the substrate on which the liquid film is formed; a discharge line configured to discharge a fluid inside the pressure container; a depressurizing valve provided in a middle of the discharge line; and a concentration measurement part configured to measure a concentration of vapor of the drying liquid in the fluid flowing through the discharge line, wherein the concentration measurement part is provided on a downstream side of the depressurizing valve of the discharge line and measures the concentration of the drying liquid in the fluid depressurized by the depressurizing valve.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

A substrate processing apparatus includes: a processing container to which a supercritical fluid is supplied, the processing container being configured to dry a substrate by replacing a drying liquid collected on the substrate with the supercritical fluid; a discharge line configured to discharge a mixed fluid containing the supercritical fluid and the drying liquid from an interior of the processing container; and a density detector configured to detect a density of the mixed fluid flowing through the discharge line.

There is provided a substrate processing apparatus comprising a liquid amount detecting part configured to detect a liquid amount of a liquid film formed on a substrate; and a coating state detecting part configured to detect a coating state of the substrate with the liquid film formed thereon.

Growing community of inventors

Koshi, Japan

Masataka Gosho