Ube Industries, Inc.

Samsung Electronics Co., Ltd.

Tokyo Electron Limited

Masashi Shirai

Toshio Furuya

Katsumasa Harada

Koji Shiba

Hiroshi Nihei

Ryoji Sugise

Toshihiro Shimakawa

Kouichi Kashiwagi

Shinichiro Sadaike

Soyoung Lee

Shigeyoshi Nishino

Hidetaka Shima

Younjoung Cho

Akira Shimizu

Nobuyuki Kuroda

Jaesoon Lim

Takahiro Miyahara

Yoshihiro Yoshida

Chihiro Hasegawa

Osamu Fujimura

Takafumi Iwasa

Yoshihisa Kakuta

Kazuaki Kakita

Hiroki Kanato

A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound

A method of forming an SiCN film on a surface to be processed of an object, the method including: supplying an Si source gas containing an Si source into a processing chamber having the object accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon is used as the nitriding agent and wherein R, Rand Rin the compound of nitrogen and carbon are linear or branched alkyl groups having 1 to 8 carbon atoms, which may have hydrogen atoms or substituents. Therefore, the SiCN film can be formed while maintaining a satisfactory film forming rate even though the film forming temperature is lowered.

Film forming method of SiCN film

The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein

Tris(dialkylamide)aluminum compound, and method for producing aluminum-containing thin film using same

The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein

(Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound

The present invention relates to a binuclear ruthenium complex dye having a higher absorption coefficient and capable of absorbing light of longer wavelength for realizing a photoelectric conversion element and a photochemical cell which may convert solar light into electricity over a wide wavelength range and exhibit high photoelectric conversion efficiency; and a binuclear ruthenium complex dye for realizing a photoelectric conversion element and a photochemical cell which may have high durability.

Photoelectric conversion element comprising binuclear ruthenium complex dye having a substituted bipyridyl group, and photochemical cell

The compounds represented by the formula (I) are produced by reacting benzene compound of the formula (IV) or (V) with alkenylidene diacetate of the formula (VI) in the presence of a catalyst comprising one or more members selected from (a) halogenated boron compounds, 

Process for producing 1-acetoxy-3-(substituted phenyl)propene compound

Process for preparing piperonal

A process for preparing 3,4-methylenedioxymandelic acid by reacting 1,2-methylenedioxybenzene with glyoxylic acid in the presence of a strong acid and of at least one substance selected from the group consisting of an aprotic organic solvent and 100 to 1200 ml of an organic acid per kg of 1,2-methylenedioxybenzene.

Process for the preparation of 3,4-methylenedioxymandelic acid

3,4-dihydroxybenzonitrile useful as a starting compound for synthesis of medicines and agricultural chemicals is produced, with a high yield by chlorinating 3,4-methylenedioxybenzonitrile with sulfuryl chloride or a mixture of molecular chlorine with a chlorination-promoter including phosphorus trichloride, phosphorus pentachloride, sulfuryl chloride, thionyl chloride, and/or nitrosyl chloride, to prepare 2-chloro-benzo&lsqb;1,3&rsqb;dioxole-5-carbonitrile, and hydrolyzing 2-chloro-benzo&lsqb;1,3&rsqb;dioxole-5-carbonitrile by contacting it with water to produce 3,4-dihydroxybenzonitrile.

Process for producing 3,4-dihydroxybenzonitrile

Protocatechualdehyde is prepared by the steps of reacting piperonyl dichloride with molecular chlorine in the presence of phosphorus trichloride, phosphorus pentachloride or sulfuryl chloride to prepare dichloropiperonylidene dichloride and hydrolyzing the dichloropiperonylidene dichloride. The piperonyl dichloride can be prepared by the reaction of piperonal with thionyl chloride in the presence of dimethylformamide.

Process for preparing protocatechualdehyde

Straight-chain acrylonitrile dimers including 1,4-dicyanobutene, 1,4-dicyanobutadiene and adiponitrile are produced at a high selectivity by dimerizing acrylonitrile in the presence of a ruthenium catalyst, and in the presence of a straight-chain dimer selectivity-enhancing agent comprising at least one member selected from

Method of producing straight-chain acrylonitrile dimers

Straight-chain acrylonitrile dimers including 1,4-dicyanobutene, 1,4-dicyanobutadiene and adiponitrile are produced at a high selectivity rate and yield by dimerizing acrylonitrile in the presence of a catalyst comprising at least one ruthenium compound, for example dichloro-tetrakis (dimethylsulfoxide) ruthenium, and in the presence of at least one organic acid, for example, propionic acid, and optionally in the further presence of a basic compound, a reducing compound and/or a sulfoxide compound.

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Ube, Japan

Masashi Shirai