Sanyo Electric Co., Ltd.

Masaru Takeuchi

Yukinori Kuwano

Takeo Fukatsu

Shoichi Nakano

Kazuyuki Gotoh

Kazuyuki Goto

Kazuhiko Honma

Kiyoshi Yoneda

Koji Suzuki

Yoshihiro Morimoto

Masayuki Iwamoto

Koji Minami

Kenichiro Wakisaka

Hisao Haku

Kiichi Hirano

Kenichiro Wakizaka

To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved. Further, combination of the ion implantation method and the showering method achieves a high throughput production of TFTs having stable performance.

Manufacturing method of semiconductor devices

An electrostatic latent image forming apparatus includes a dielectric drum (10) a surface of which is uniformly charged in a predetermined polarity by a charging corotron (16). A recording head (18) includes a transparent base plate (30), a transparent electrode (32) and a photoconductive layer (34) composed of an amorphous silicon are formed on the transparent base plate in this order. A plurality of discharging electrodes (36) are formed on the photoconductive layer. A bias voltage (46) having a reverse polarity of the charged polarity being charging by the charging corotron is applied. When a light signal in accordance with an image to be formed is entered on the back surface of the transparent base plate, carriers, that is, holes and electrons are generated in the photoconductive layer, the carrier having the same polarity as the bias voltage is discharged onto the dielectric drum through the discharging electrodes. Electric charges are removed or reduced at a portion on the dielectric drum where such discharge occurs, and therefore an electrostatic latent image in accordance with the light signal being entered is formed on the dielectric drum.

Electrostatic latent image forming apparatus

An electrophotographic photosensitive sensor comprises a blocking layer, a photoconductive layer and a surface layer made mainly of microcrystalline or amorphous silicon and/or germanium and formed on a conductive substrate. At least one of the layers including the blocking layer, the photoconductive layer or the surface layer includes a multilayer which includes a plurality of constituent thin layers having different optical energy band gaps.

Electrophotographic photosensitive sensor

An electrostatic recording apparatus comprises a photosensitive drum. The photosensitive drum comprises a bulk layer of amorphous silicon formed on a support, and in the bulk layer, a first layer region is formed at the support side and a second layer region is formed at the surface side. The first layer region is formed in a manner of comprising hydrogen of 0.01-40 atomic %, oxygen of 0.1-40 atomic % and boron of 5.times.10.sup.-6 -1.0 atomic %. On the other hand, oxygen and boron are not doped virtually in the second layer region and generation of carrier traps is suppressed in this non-doped second layer region. Furthermore, the peak wavelengths of the lights irradiated onto the photosensitive drum from both a light source for exposure and light source for discharge are set shorter than 650 nm, and preferably shorter than 600 nm. Light of short wavelengths shorter than 650 nm is almost absorbed in the second layer region, and generation of carriers in the first layer region is small, and thereby capture of carriers in traps is suppressed.

Electrostatic recording apparatus

An electrophotographic photosensitive member comprising (a) a substrate made of an electrically conductive material, (b) a silicide layer formed on the surface of the substrate, and (c) a photoconductive layer superposed on the silicide layer being composed chiefly of amorphous silicon; which is usable for copying machines and intelligent copying machine.

Electrophotographic member with silicide interlayer

The photovoltaic device of this invention has a p-type layer of oxides of the platinum group between a transparent electrode layer texturized at the side opposite the light incident surface and a semiconductive layer having a semiconductor junction and including a p-type layer at the light incident side thereof. With such a construction, the optical path length of an incident ray is increased, thereby improving the photoelectric conversion efficiency. Also, since the p-type semiconductive layer contacts the p-type layer of oxides of the platinum group, imperfections in the semiconductor junction can be reduced. Accordingly, with a photovoltaic device of this invention, the peak value of the photoelectric conversion efficiency can be increased and also the manufacturing yield can be remarkably increased.

Photovoltaic device

A photovoltaic cell in accordance with the present invention comprises a transparent substrate, a transparent first electrode layer on the substrate and a first semiconductor layer of P type on the first electrode layer, the first semiconductor layer being approximately 25 to 300 .ANG. in thickness and having activation energy of less than 0.3 eV for generation of positive holes. The above stated cell further comprises a second semiconductor layer of the same conductivity type on the first semiconductor layer, the second semiconductor layer being approximately 100 to 1000 .ANG. in thickness and having activation energy of more than 0.3 eV for generation of positive holes. The above stated cell further comprises a third semiconductor layer of I type on the second semiconductor layer, a fourth semiconductor layer of N type on the third semiconductor layer and a second electrode layer on the fourth semiconductor layer.

Photovoltaic cell

A semiconductor optical logical device comprises two light-emitting elements (2a, 2b) formed on one main surface of a transparent substrate (1), and two light sensitive elements (3a, 3b) formed on the other main surface faced to the light emitting elements (2a, 2b), respectively. The two light sensitive elements (3a, 3b) are comprised of amorphous semiconductor and are electrically connected in series. On the other hand, the light-emitting elements (2a, 2b) are driven responsive to individual input signals, respectively. If and when two input signals are applied simultaneously, the two light-emitting elements (2a, 2b) emit light simultaneously, so that an output is obtained from the two light sensitive elements connected in series. If and when only one input signal is applied, no output is obtained. Thus, an optical logical product circuit is provided.

Semiconductor optical logical device

A light sensitive apparatus includes a light sensitive body and at least two leads electrically connected thereto so that the light sensitive body can be mechanically supported by the leads. The light sensitive body includes a light transmissible substrate, a transparent electrode formed on the substrate, a thin film of non-single crystal semiconductor layer deposited on the transparent electrode, a first electrode disposed on the non-single crystal semiconductor, and the second electrode disposed on an exposed portion of the transparent electrode. The first lead is connected to the first electrode and the second lead is connected to the second electrode.

Growing community of inventors

Osaka, Japan

Masaru Takeuchi